Issued Patents 2018
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10147782 | Tapered metal nitride structure | Hiroyuki Miyazoe, Vijay Narayanan | 2018-12-04 |
| 10141333 | Domain wall control in ferroelectric devices | — | 2018-11-27 |
| 10109336 | Domain wall control in ferroelectric devices | Jonathan Z. Sun | 2018-10-23 |
| 10062693 | Patterned gate dielectrics for III-V-based CMOS circuits | Takashi Ando, Renee T. Mo, Vijay Narayanan, John Rozen | 2018-08-28 |
| 10062694 | Patterned gate dielectrics for III-V-based CMOS circuits | Takashi Ando, Renee T. Mo, Vijay Narayanan, John Rozen | 2018-08-28 |
| 10014371 | Stressed nanowire stack for field effect transistor | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2018-07-03 |
| 10002871 | High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Pranita Kerber, Vijay Narayanan | 2018-06-19 |
| 9954176 | Dielectric treatments for carbon nanotube devices | Damon B. Farmer, Shu-Jen Han | 2018-04-24 |
| 9941128 | Method of lateral oxidation of NFET and PFET high-k gate stacks | Takashi Ando, Robert H. Dennard | 2018-04-10 |
| 9876090 | Lattice matched and strain compensated single-crystal compound for gate dielectric | Guy M. Cohen | 2018-01-23 |
| 9859279 | High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Pranita Kerber, Vijay Narayanan | 2018-01-02 |