DG

Dechao Guo

IBM: 17 patents #207 of 10,623Top 2%
Overall (2018): #2,179 of 503,207Top 1%
17
Patents 2018

Issued Patents 2018

Patent #TitleCo-InventorsDate
10141308 Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices Praneet Adusumilli, Oleg Gluschenkov, Zuoguang Liu, Rajasekhar Venigalla, Tenko Yamashita 2018-11-27
10128239 Preserving channel strain in fin cuts Andrew M. Greene, Ravikumar Ramachandran, Rajasekhar Venigalla 2018-11-13
10096713 FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation Hemanth Jagannathan, Shogo Mochizuki, Gen Tsutsui, Chun-Chen Yeh 2018-10-09
10068805 Self-aligned spacer for cut-last transistor fabrication Ruqiang Bao, Zuoguang Liu 2018-09-04
10056378 Silicon nitride fill for PC gap regions to increase cell density Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh 2018-08-21
10056382 Modulating transistor performance Juntao Li, Sanjay C. Mehta, Robert R. Robison, Huimei Zhou 2018-08-21
10043891 Replacement metal gate scheme with self-alignment gate for vertical field effect transistors Raqiang Bao 2018-08-07
10032679 Self-aligned doping in source/drain regions for low contact resistance Zuoguang Liu, Gen Tsutsui, Heng Wu 2018-07-24
10020378 Self-aligned spacer for cut-last transistor fabrication Ruqiang Bao, Zuoguang Liu 2018-07-10
9978750 Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices Praneet Adusumilli, Oleg Gluschenkov, Zuoguang Liu, Rajasekhar Venigalla, Tenko Yamashita 2018-05-22
9960254 Replacement metal gate scheme with self-alignment gate for vertical field effect transistors Raqiang Bao 2018-05-01
9941282 Integrated metal gate CMOS devices Ruqiang Bao, Vijay Narayanan 2018-04-10
9922984 Threshold voltage modulation through channel length adjustment Ruqiang Bao, Derrick Liu, Huimei Zhou 2018-03-20
9922983 Threshold voltage modulation through channel length adjustment Ruqiang Bao, Derrick Liu, Huimei Zhou 2018-03-20
9899264 Integrated metal gate CMOS devices Ruqiang Bao, Vijay Narayanan 2018-02-20
9859286 Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh 2018-01-02
9859275 Silicon nitride fill for PC gap regions to increase cell density Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh 2018-01-02