Issued Patents 2018
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164119 | Vertical field effect transistors with protective fin liner during bottom spacer recess etch | Hari V. Mallela, Reinaldo Vega | 2018-12-25 |
| 10141308 | Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices | Praneet Adusumilli, Oleg Gluschenkov, Dechao Guo, Zuoguang Liu, Tenko Yamashita | 2018-11-27 |
| 10128239 | Preserving channel strain in fin cuts | Andrew M. Greene, Dechao Guo, Ravikumar Ramachandran | 2018-11-13 |
| 10109535 | Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess ETCH | Hari V. Mallela, Reinaldo Vega | 2018-10-23 |
| 10096607 | Three-dimensional stacked junctionless channels for dense SRAM | Michael A. Guillorn, Robert R. Robison, Reinaldo Vega | 2018-10-09 |
| 10083961 | Gate cut with integrated etch stop layer | Marc A. Bergendahl, Andrew M. Greene | 2018-09-25 |
| 10068991 | Patterned sidewall smoothing using a pre-smoothed inverted tone pattern | Kafai Lai, Hari V. Mallela, Hiroyuki Miyazoe, Reinaldo Vega | 2018-09-04 |
| 9985115 | Vertical transistor fabrication and devices | Brent A. Anderson, Bruce B. Doris, Seong-Dong Kim | 2018-05-29 |
| 9978750 | Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices | Praneet Adusumilli, Oleg Gluschenkov, Dechao Guo, Zuoguang Liu, Tenko Yamashita | 2018-05-22 |
| 9941411 | Vertical transistor fabrication and devices | Brent A. Anderson, Bruce B. Doris, Seong-Dong Kim | 2018-04-10 |
| 9929058 | Vertical FETS with variable bottom spacer recess | Hari V. Mallela, Reinaldo Vega | 2018-03-27 |
| 9911804 | Vertical fin field effect transistor with air gap spacers | Hari V. Mallela, Robert R. Robison, Reinaldo Vega | 2018-03-06 |
| 9859384 | Vertical field effect transistors with metallic source/drain regions | Hari V. Mallela, Robert R. Robison, Reinaldo Vega | 2018-01-02 |
| 9859421 | Vertical field effect transistor with subway etch replacement metal gate | Robert R. Robison, Reinaldo Vega | 2018-01-02 |