| 10128352 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Lars Liebmann |
2018-11-13 |
| 10115629 |
Air gap spacer formation for nano-scale semiconductor devices |
Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Son V. Nguyen +2 more |
2018-10-30 |
| 10079299 |
Self aligned top extension formation for vertical transistors |
Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek |
2018-09-18 |
| 10056382 |
Modulating transistor performance |
Dechao Guo, Juntao Li, Robert R. Robison, Huimei Zhou |
2018-08-21 |
| 10014299 |
Field effect transistor device spacers |
Xiuyu Cai, Tenko Yamashita |
2018-07-03 |
| 9985096 |
High thermal budget compatible punch through stop integration using doped glass |
Kangguo Cheng, Xin Miao, Chun-Chen Yeh |
2018-05-29 |
| 9953976 |
Effective device formation for advanced technology nodes with aggressive fin-pitch scaling |
Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. Surisetty |
2018-04-24 |
| 9954103 |
Bottom spacer formation for vertical transistor |
Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek |
2018-04-24 |
| 9941391 |
Method of forming vertical transistor having dual bottom spacers |
Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek |
2018-04-10 |
| 9941163 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Lars Liebmann |
2018-04-10 |
| 9929049 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Lars Liebmann |
2018-03-27 |
| 9923074 |
Pure boron for silicide contact |
Chia-Yu Chen, Zuoguang Liu, Tenko Yamashita |
2018-03-20 |
| 9911831 |
Spacer formation on semiconductor device |
Thamarai S. Devarajan, Eric R. Miller, Soon-Cheon Seo |
2018-03-06 |
| 9911823 |
POC process flow for conformal recess fill |
Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie |
2018-03-06 |
| 9899259 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Lars Liebmann |
2018-02-20 |
| 9892961 |
Air gap spacer formation for nano-scale semiconductor devices |
Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Son V. Nguyen +2 more |
2018-02-13 |
| 9876091 |
Divot-free planarization dielectric layer for replacement gate |
Hemanth Jagannathan |
2018-01-23 |
| 9871041 |
Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistors |
Kangguo Cheng, Zuoguang Liu, Tenko Yamashita |
2018-01-16 |
