| 10141232 |
Vertical CMOS devices with common gate stacks |
Choonghyun Lee, Injo Ok |
2018-11-27 |
| 10121853 |
Structure and process to tuck fin tips self-aligned to gates |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie +2 more |
2018-11-06 |
| 10121852 |
Structure and process to tuck fin tips self-aligned to gates |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie +2 more |
2018-11-06 |
| 10115800 |
Vertical fin bipolar junction transistor with high germanium content silicon germanium base |
Seyoung Kim, Choonghyun Lee, Injo Ok |
2018-10-30 |
| 10084067 |
FinFET with epitaxial source and drain regions and dielectric isolated channel region |
Kangguo Cheng, Ramachandra Divakaruni, Ali Khakifirooz, Alexander Reznicek |
2018-09-25 |
| 10074569 |
Minimize middle-of-line contact line shorts |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2018-09-11 |
| 10049876 |
Removal of trilayer resist without damage to underlying structure |
Muthumanickam Sankarapandian, Indira Seshadri, John R. Sporre |
2018-08-14 |
| 10043904 |
Method and structure of improving contact resistance for passive and long channel devices |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2018-08-07 |
| 10020306 |
Spacer for trench epitaxial structures |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2018-07-10 |
| 10014220 |
Self heating reduction for analog radio frequency (RF) device |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty, Tenko Yamashita |
2018-07-03 |
| 10014295 |
Self heating reduction for analog radio frequency (RF) device |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty, Tenko Yamashita |
2018-07-03 |
| 9985130 |
Salicide formation on replacement metal gate finFET devices |
Effendi Leobandung, Tenko Yamashita, Chun-Chen Yeh |
2018-05-29 |
| 9978775 |
FinFET device with abrupt junctions |
Kangguo Cheng, Hong He, Ali Khakifirooz, Alexander Reznicek |
2018-05-22 |
| 9953976 |
Effective device formation for advanced technology nodes with aggressive fin-pitch scaling |
Injo Ok, Sanjay C. Mehta, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2018-04-24 |
| 9911831 |
Spacer formation on semiconductor device |
Thamarai S. Devarajan, Sanjay C. Mehta, Eric R. Miller |
2018-03-06 |
| 9905479 |
Semiconductor devices with sidewall spacers of equal thickness |
Kangguo Cheng, Balasubramanian Pranatharthiharan |
2018-02-27 |
| 9905421 |
Improving channel strain and controlling lateral epitaxial growth of the source and drain in FinFET devices |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2018-02-27 |
| 9893085 |
Integrated circuit (IC) with offset gate sidewall contacts and method of manufacture |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2018-02-13 |
| 9887289 |
Method and structure of improving contact resistance for passive and long channel devices |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2018-02-06 |
| 9887198 |
Semiconductor devices with sidewall spacers of equal thickness |
Kangguo Cheng, Balasubramanian Pranatharthiharan |
2018-02-06 |
| 9876074 |
Structure and process to tuck fin tips self-aligned to gates |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie +2 more |
2018-01-23 |
| 9871099 |
Nanosheet isolation for bulk CMOS non-planar devices |
Balasubramanian Pranatharthiharan, Injo Ok, Charan V. Surisetty |
2018-01-16 |
