| 10141320 |
Multiple-bit electrical fuses |
Kangguo Cheng |
2018-11-27 |
| 10084067 |
FinFET with epitaxial source and drain regions and dielectric isolated channel region |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo |
2018-09-25 |
| 10062615 |
Stacked nanowire devices |
Kangguo Cheng, Juntao Li |
2018-08-28 |
| 10002876 |
FinFET vertical flash memory |
Arvind Kumar, Carl Radens |
2018-06-19 |
| 9997606 |
Fully depleted SOI device for reducing parasitic back gate capacitance |
Kangguo Cheng |
2018-06-12 |
| 9997618 |
Integrated strained stacked nanosheet FET |
Kangguo Cheng, Juntao Li, Xin Miao |
2018-06-12 |
| 9966253 |
Forming nanotips |
Kangguo Cheng, Juntao Li, Shogo Mochizuki |
2018-05-08 |
| 9960168 |
Capacitor strap connection structure and fabrication method |
Veeraraghavan S. Basker, Kangguo Cheng, Benjamin Cipriany, Brian J. Greene, Ali Khakifirooz +2 more |
2018-05-01 |
| 9954109 |
Vertical transistor including controlled gate length and a self-aligned junction |
Kangguo Cheng |
2018-04-24 |
| 9929060 |
Porous silicon relaxation medium for dislocation free CMOS devices |
Kangguo Cheng, Jeehwan Kim, Juntao Li, Devendra K. Sadana |
2018-03-27 |
| 9917199 |
Method for reduced parasitic capacitance and contact resistance in extremely thin silicon-on-insulator (ETSOI) devices due to wrap-around structure of source/drain regions |
Kangguo Cheng |
2018-03-13 |
| 9917021 |
Porous silicon relaxation medium for dislocation free CMOS devices |
Kangguo Cheng, Jeehwan Kim, Juntao Li, Devendra K. Sadana |
2018-03-13 |
| 9911834 |
Integrated strained stacked nanosheet FET |
Kangguo Cheng, Juntao Li, Xin Miao |
2018-03-06 |
| 9865509 |
FinFET CMOS with Si NFET and SiGe PFET |
Kangguo Cheng, Jeehwan Kim |
2018-01-09 |
