Issued Patents 2018
Showing 25 most recent of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164056 | Vertical field effect transistors with uniform threshold voltage | Kangguo Cheng, Heng Wu, Peng Xu | 2018-12-25 |
| 10164055 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-12-25 |
| 10153367 | Gate length controlled vertical FETs | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-12-11 |
| 10147808 | Techniques for forming vertical tunneling FETS | Juntao Li, Kangguo Cheng, Peng Xu | 2018-12-04 |
| 10141441 | Vertical transistor with back bias and reduced parasitic capacitance | Kangguo Cheng, Peng Xu, Chen Zhang | 2018-11-27 |
| 10141448 | Vertical FETs with different gate lengths and spacer thicknesses | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2018-11-27 |
| 10141234 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-11-27 |
| 10134866 | Field effect transistor air-gap spacers with an etch-stop layer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-11-20 |
| 10134874 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-11-20 |
| 10134760 | FinFETs with various fin height | Kangguo Cheng, Terence B. Hook, Balasubramanian Pranatharthiharan | 2018-11-20 |
| 10128122 | Stacked nanowires | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2018-11-13 |
| 10121879 | Forming odd number of fins by sidewall imaging transfer | Kangguo Cheng | 2018-11-06 |
| 10115805 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Juntao Li, Zuoguang Liu | 2018-10-30 |
| 10109491 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-10-23 |
| 10103246 | Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-10-16 |
| 10096673 | Nanowire with sacrificial top wire | Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2018-10-09 |
| 10096674 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-10-09 |
| 10090412 | Vertical transistor with back bias and reduced parasitic capacitance | Kangguo Cheng, Peng Xu, Chen Zhang | 2018-10-02 |
| 10083871 | Fabrication of a vertical transistor with self-aligned bottom source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-09-25 |
| 10084081 | Vertical transistor with enhanced drive current | Kangguo Cheng, Alexander Reznicek | 2018-09-25 |
| 10079304 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Juntao Li | 2018-09-18 |
| 10079302 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Juntao Li | 2018-09-18 |
| 10074652 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Philip J. Oldiges, Wenyu Xu, Chen Zhang | 2018-09-11 |
| 10069015 | Width adjustment of stacked nanowires | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-09-04 |
| 10068799 | Self-aligned contact | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-09-04 |