| 10121786 |
FinFET with U-shaped channel and S/D epitaxial cladding extending under gate spacers |
Takashi Ando, Robert H. Dennard, Ramachandran Muralidhar, Ghavam G. Shahidi |
2018-11-06 |
| 10096673 |
Nanowire with sacrificial top wire |
Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Xin Miao |
2018-10-09 |
| 10056487 |
Strained semiconductor nanowire |
Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight |
2018-08-21 |
| 10056293 |
Techniques for creating a local interconnect using a SOI wafer |
Josephine B. Chang, Michael A. Guillorn, Jeffrey W. Sleight |
2018-08-21 |
| 10050144 |
Fabrication of a strained region on a substrate |
Jiaxing Liu, Renee T. Mo |
2018-08-14 |
| 10037885 |
Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer |
Bruce B. Doris, Michael A. Guillorn, Xin Miao |
2018-07-31 |
| 10026810 |
Co-integration of silicon and silicon-germanium channels for nanosheet devices |
Michael A. Guillorn, Nicolas Loubet |
2018-07-17 |
| 9997472 |
Support for long channel length nanowire transistors |
Karthik Balakrishnan, Tenko Yamashita, Jeffrey W. Sleight |
2018-06-12 |
| 9997613 |
Integrated etch stop for capped gate and method for manufacturing the same |
Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Xin Miao |
2018-06-12 |
| 9954062 |
Stacked planar double-gate lamellar field-effect transistor |
Josephine B. Chang, Michael A. Guillorn, Gen P. Lauer, Jeffrey W. Sleight |
2018-04-24 |
| 9954063 |
Stacked planar double-gate lamellar field-effect transistor |
Josephine B. Chang, Michael A. Guillorn, Gen P. Lauer, Jeffrey W. Sleight |
2018-04-24 |
| 9922830 |
Hybrid III-V technology to support multiple supply voltages and off state currents on same chip |
Josephine B. Chang, Amlan Majumdar, Jeffrey W. Sleight |
2018-03-20 |
| 9922942 |
Support for long channel length nanowire transistors |
Karthik Balakrishnan, Tenko Yamashita, Jeffrey W. Sleight |
2018-03-20 |
| 9917057 |
Mixed lithography approach for E-beam and optical exposure using HSQ |
Josephine B. Chang, Szu-Lin Cheng, Jeffrey W. Sleight |
2018-03-13 |
| 9911592 |
Method for making nanosheet CMOS device integrating atomic layer deposition process and replacement gate structure |
Bruce B. Doris, Michael A. Guillorn, Xin Miao |
2018-03-06 |
| 9887264 |
Nanowire field effect transistor (FET) and method for fabricating the same |
Jack O. Chu, Szu-Lin Cheng, Kuen-Ting Shiu, Jeng-Bang Yau |
2018-02-06 |
| 9859375 |
Stacked planar double-gate lamellar field-effect transistor |
Josephine B. Chang, Michael A. Guillorn, Gen P. Lauer, Jeffrey W. Sleight |
2018-01-02 |
| 9859430 |
Local germanium condensation for suspended nanowire and finFET devices |
Josephine B. Chang, Leland Chang, Jeffrey W. Sleight |
2018-01-02 |
