Issued Patents 2018
Showing 1–25 of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164055 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-12-25 |
| 10153367 | Gate length controlled vertical FETs | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-12-11 |
| 10141234 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-11-27 |
| 10141448 | Vertical FETs with different gate lengths and spacer thicknesses | Xin Miao, Kangguo Cheng, Chen Zhang | 2018-11-27 |
| 10134866 | Field effect transistor air-gap spacers with an etch-stop layer | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-11-20 |
| 10134874 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-11-20 |
| 10109491 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-10-23 |
| 10103246 | Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-10-16 |
| 10083871 | Fabrication of a vertical transistor with self-aligned bottom source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-09-25 |
| 10074652 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Philip J. Oldiges, Chen Zhang | 2018-09-11 |
| 10068799 | Self-aligned contact | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-09-04 |
| 10032676 | Vertical field effect transistor having U-shaped top spacer | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-07-24 |
| 10020416 | Radiation sensor, method of forming the sensor and device including the sensor | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-07-10 |
| 10002809 | Top contact resistance measurement in vertical FETs | Kangguo Cheng, Zuoguang Liu, Xin Miao, Chen Zhang | 2018-06-19 |
| 10002803 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-06-19 |
| 9997597 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-06-12 |
| 9997421 | Top contact resistance measurement in vertical FETS | Kangguo Cheng, Zuoguang Liu, Xin Miao, Chen Zhang | 2018-06-12 |
| 9972700 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-05-15 |
| 9972542 | Hybrid-channel nano-sheet FETs | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-05-15 |
| 9960164 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-05-01 |
| 9935101 | Vertical field effect transistor with uniform gate length | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-04-03 |
| 9905663 | Fabrication of a vertical fin field effect transistor with a reduced contact resistance | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-02-27 |
| 9899515 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-02-20 |
| 9876097 | Selectively formed gate sidewall spacer | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-01-23 |
| 9865705 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Xin Miao, Chen Zhang | 2018-01-09 |