Issued Patents 2018
Showing 25 most recent of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10163684 | Fabrication of silicon germanium-on-insulator FinFET | Bruce B. Doris, Qing Liu | 2018-12-25 |
| 10164060 | Work function metal fill for replacement gate fin field effect transistor process | Junli Wang, Yongan Xu, Yunpeng Yin | 2018-12-25 |
| 10147803 | Work function metal fill for replacement gate fin field effect transistor process | Junli Wang, Yongan Xu, Yunpeng Yin | 2018-12-04 |
| 10141428 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Yunpeng Yin | 2018-11-27 |
| 10121853 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-11-06 |
| 10121852 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-11-06 |
| 10074577 | Silicon germanium and silicon fins on oxide from bulk wafer | James Kuss, Nicolas Loubet, Junli Wang | 2018-09-11 |
| 10062783 | Silicon germanium fin channel formation | Nicolas Loubet, Junli Wang | 2018-08-28 |
| 10037944 | Self-aligned contact process enabled by low temperature | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2018-07-31 |
| 10032680 | Strained finFET device fabrication | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2018-07-24 |
| 10032912 | Semiconductor integrated structure having an epitaxial SiGe layer extending from silicon-containing regions formed between segments of oxide regions | Pierre Morin, Kangguo Cheng, Jody A. Fronheiser, Xiuyu Cai, Juntao Li +3 more | 2018-07-24 |
| 10020303 | Methods for forming FinFETs having epitaxial Si S/D extensions with flat top surfaces on a SiGe seed layer | Shogo Mochizuki, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2018-07-10 |
| 9991255 | FinFETs with non-merged epitaxial S/D extensions on a seed layer and having flat top surfaces | Shogo Mochizuki, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2018-06-05 |
| 9991258 | FinFETs with non-merged epitaxial S/D extensions having a SiGe seed layer on insulator | Shogo Mochizuki, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2018-06-05 |
| 9985030 | FinFET semiconductor device having integrated SiGe fin | Kangguo Cheng, Ali Khakifirooz, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2018-05-29 |
| 9978775 | FinFET device with abrupt junctions | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo | 2018-05-22 |
| 9953916 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Juntao Li, Chih-Chao Yang, Yunpeng Yin | 2018-04-24 |
| 9947791 | FinFET with merge-free fins | Chiahsun Tseng, Junli Wang, Chun-Chen Yeh, Yunpeg Yin | 2018-04-17 |
| 9917105 | Replacement fin process in SSOI wafer | Bruce B. Doris, Ali Khakifirooz, Junli Wang | 2018-03-13 |
| 9917019 | Strained FinFET device fabrication | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2018-03-13 |
| 9911601 | Epitaxial silicon germanium fin formation using sacrificial silicon fin templates | Juntao Li, Junli Wang, Chih-Chao Yang | 2018-03-06 |
| 9899253 | Fabrication of silicon germanium-on-insulator finFET | Bruce B. Doris, Qing Liu | 2018-02-20 |
| 9892910 | Method and structure for forming a dense array of single crystalline semiconductor nanocrystals | Kangguo Cheng, Juntao Li | 2018-02-13 |
| 9881869 | Middle of the line integrated efuse in trench EPI structure | Juntao Li, Junli Wang, Chih-Chao Yang | 2018-01-30 |
| 9882006 | Silicon germanium fin channel formation | Nicolas Loubet, Junli Wang | 2018-01-30 |