JF

Jody A. Fronheiser

Globalfoundries: 6 patents #51 of 961Top 6%
IBM: 1 patents #5,555 of 10,623Top 55%
SS Stmicroelectronics Sa: 1 patents #50 of 127Top 40%
📍 Delmar, NY: #1 of 20 inventorsTop 5%
🗺 New York: #574 of 11,825 inventorsTop 5%
Overall (2018): #19,576 of 503,207Top 4%
6
Patents 2018

Issued Patents 2018

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
10163677 Electrically insulated fin structure(s) with alternative channel materials and fabrication methods Murat Kerem Akarvardar 2018-12-25
10032912 Semiconductor integrated structure having an epitaxial SiGe layer extending from silicon-containing regions formed between segments of oxide regions Pierre Morin, Kangguo Cheng, Xiuyu Cai, Juntao Li, Shogo Mochizuki +3 more 2018-07-24
10026659 Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar 2018-07-17
9960257 Common fabrication of multiple FinFETs with different channel heights Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob 2018-05-01
9881830 Electrically insulated fin structure(s) with alternative channel materials and fabrication methods Murat Kerem Akarvardar 2018-01-30
9882052 Forming defect-free relaxed SiGe fins Robert Judson Holt, Jinping Liu, Bharat Krishnan, Churamani Gaire, Timothy J. McArdle +1 more 2018-01-30