Issued Patents 2018
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10115807 | Method, apparatus and system for improved performance using tall fins in finFET devices | Hui Zang, Min-hwa Chi | 2018-10-30 |
| 10062692 | Field effect transistors with reduced parasitic resistances and method | Shishir Ray, Bharat Krishnan, Meera S. Mohan, Joseph K. Kassim | 2018-08-28 |
| 10056458 | Siloxane and organic-based MOL contact patterning | Chang Ho Maeng, Andy Wei, Anthony Ozzello, Bharat Krishnan, Guillaume Bouche +9 more | 2018-08-21 |
| 10020202 | Fabrication of multi threshold-voltage devices | Donghun Kang, Balaji Kannan | 2018-07-10 |
| 10008456 | Laminated spacers for field-effect transistors | Tao Han, Man Gu | 2018-06-26 |
| 10002793 | Sub-fin doping method | Jiehui Shu, David Paul Brunco, Baofu Zhu, Shesh Mani Pandey | 2018-06-19 |
| 9991363 | Contact etch stop layer with sacrificial polysilicon layer | Haigou Huang, Jinsheng Gao, Haifeng Sheng, Huy Cao, Hui Zang | 2018-06-05 |
| 9984933 | Silicon liner for STI CMP stop in FinFET | Yiheng Xu, Haiting Wang, Wei Zhao, Todd B. Abrams, Jiehui Shu +1 more | 2018-05-29 |
| 9981917 | Preparation method for revaprazan hydrochloride | Wenzheng LIU, Guocheng Wang, Qingwei Hou, Qiaoping Cui, Zhanyuan Zhu +2 more | 2018-05-29 |
| 9966272 | Methods for nitride planarization using dielectric | Haifeng Sheng, Haigou Huang, Tai Fong Chao, Jiehui Shu, Xingzhao Shi +1 more | 2018-05-08 |
| 9947769 | Multiple-layer spacers for field-effect transistors | Tao Han, Zhenyu Hu, Hsien-Ching Lo, Jianwei Peng | 2018-04-17 |
| 9905472 | Silicon nitride CESL removal without gate cap height loss and resulting device | Jiehui Shu, Haifeng Sheng | 2018-02-27 |
| 9882052 | Forming defect-free relaxed SiGe fins | Robert Judson Holt, Jody A. Fronheiser, Bharat Krishnan, Churamani Gaire, Timothy J. McArdle +1 more | 2018-01-30 |