Issued Patents 2018
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10121788 | Fin-type field effect transistors with single-diffusion breaks and method | Haiting Wang, Wei Zhao, Hong Yu, Xusheng Wu, Hui Zang | 2018-11-06 |
| 10090382 | Integrated circuit structure including single diffusion break and end isolation region, and methods of forming same | Hong Yu, Xinyuan Dou, Hui Zhan | 2018-10-02 |
| 10083873 | Semiconductor structure with uniform gate heights | Xing Zhang, Xinyuan Dou, Hong Yu | 2018-09-25 |
| 10083874 | Gate cut method | Hong Yu, Haiting Wang | 2018-09-25 |
| 10056486 | Methods for fin thinning providing improved SCE and S/D EPI growth | Shesh Mani Pandey, Pei Zhao | 2018-08-21 |
| 10043713 | Method to reduce FinFET short channel gate height | Xinyuan Dou, Hong Yu, Xing Zhang | 2018-08-07 |
| 9947769 | Multiple-layer spacers for field-effect transistors | Tao Han, Jinping Liu, Hsien-Ching Lo, Jianwei Peng | 2018-04-17 |
| 9941639 | Shielding arrangement for high-current applications | Martin Saur | 2018-04-10 |
| 9935104 | Fin-type field effect transistors with single-diffusion breaks and method | Haiting Wang, Wei Zhao, Hong Yu, Xusheng Wu, Hui Zang | 2018-04-03 |
| 9859644 | Contact element | — | 2018-01-02 |