XW

Xusheng Wu

Globalfoundries: 17 patents #10 of 961Top 2%
📍 Hsinchu, NY: #1 of 32 inventorsTop 4%
Overall (2018): #1,991 of 503,207Top 1%
17
Patents 2018

Issued Patents 2018

Showing 1–17 of 17 patents

Patent #TitleCo-InventorsDate
10121788 Fin-type field effect transistors with single-diffusion breaks and method Haiting Wang, Wei Zhao, Hong Yu, Hui Zang, Zhenyu Hu 2018-11-06
10068810 Multiple Fin heights with dielectric isolation Yi Qi, Jianwei Peng, Hsien-Ching Lo, Sipeng Gu 2018-09-04
10062772 Preventing bridge formation between replacement gate and source/drain region through STI structure Haigou Huang, Xintuo Dai 2018-08-28
10050125 Vertical-transport field-effect transistors with an etched-through source/drain cavity Yi Qi, Hui Zang, Hsien-Ching Lo 2018-08-14
10032910 FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the same Changyong Xiao, Min-hwa Chi 2018-07-24
10026818 Field effect transistor structure with recessed interlayer dielectric and method Sipeng Gu, Wenhe Lin, Jeffrey Chee 2018-07-17
10014409 Method and structure to provide integrated long channel vertical FinFET device David Paul Brunco 2018-07-03
10008576 Epi facet height uniformity improvement for FDSOI technologies George R. Mulfinger 2018-06-26
10002827 Method for selective re-routing of selected areas in a target layer and in adjacent interconnecting layers of an IC device Guoxiang Ning, Yuping Ren, Chin Teong Lim, Paul Ackmann 2018-06-19
9991361 Methods for performing a gate cut last scheme for FinFET semiconductor devices Xintuo Dai, Haigou Huang 2018-06-05
9972621 Fin structure in sublitho dimension for high performance CMOS application Chengwen Pei, Ziyan Xu 2018-05-15
9972495 Low-K dielectric spacer for a gate cut 2018-05-15
9964605 Methods for crossed-fins FinFET device for sensing and measuring magnetic fields Min-hwa Chi 2018-05-08
9935104 Fin-type field effect transistors with single-diffusion breaks and method Haiting Wang, Wei Zhao, Hong Yu, Hui Zang, Zhenyu Hu 2018-04-03
9916982 Dielectric preservation in a replacement gate process Haigou Huang, John H. Zhang 2018-03-13
9870942 Method of forming mandrel and non-mandrel metal lines having variable widths Ziyan Xu, Chengwen Pei 2018-01-16
9865681 Nanowire transistors having multiple threshold voltages John H. Zhang, Jiehui Shu 2018-01-09