| 10163635 |
Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related method |
Hui Zang, Hsien-Ching Lo, Jerome Ciavatti, Judson R. Holt |
2018-12-25 |
| 10164010 |
Finfet diffusion break having protective liner in fin insulator |
Wei Hong, Hsien-Ching Lo, Haiting Wang, Yanping Shen, Yongjun Shi +2 more |
2018-12-25 |
| 10121868 |
Methods of forming epi semiconductor material on a thinned fin in the source/drain regions of a FinFET device |
Jianwei Peng, Hsien-Ching Lo, Kwan-Yong Lim, Hui Zhan |
2018-11-06 |
| 10068902 |
Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method |
Yanping Shen, Hui Zang, Hsien-Ching Lo, Yongjun Shi, Randy W. Mann +4 more |
2018-09-04 |
| 10068810 |
Multiple Fin heights with dielectric isolation |
Xusheng Wu, Jianwei Peng, Hsien-Ching Lo, Sipeng Gu |
2018-09-04 |
| 10050125 |
Vertical-transport field-effect transistors with an etched-through source/drain cavity |
Hui Zang, Xusheng Wu, Hsien-Ching Lo |
2018-08-14 |
| 9887094 |
Methods of forming EPI semiconductor material on the source/drain regions of a FinFET device |
Hsien-Ching Lo, Jianwei Peng, Yanping Shen, Hui Zhan |
2018-02-06 |
