Issued Patents 2018
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10163635 | Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related method | Yi Qi, Hui Zang, Hsien-Ching Lo, Jerome Ciavatti | 2018-12-25 |
| 10049942 | Asymmetric semiconductor device and method of forming same | Anthony I. Chou, Arvind Kumar, Henry K. Utomo | 2018-08-14 |
| 10043893 | Post gate silicon germanium channel condensation and method for producing the same | George R. Mulfinger, Ryan Sporer, Timothy J. McArdle | 2018-08-07 |
| 10020307 | Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same | Christopher D. Sheraw, Timothy J. McArdle, Matthew W. Stoker, Mira Park, George R. Mulfinger +1 more | 2018-07-10 |
| 9947532 | Forming zig-zag trench structure to prevent aspect ratio trapping defect escape | Shogo Mochizuki, Alexander Reznicek, Melissa A. Smith | 2018-04-17 |
| 9923082 | Junction butting structure using nonuniform trench shape | Anthony I. Chou, Arvind Kumar, Henry K. Utomo | 2018-03-20 |
| 9917190 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2018-03-13 |
| 9893154 | Recess liner for silicon germanium fin formation | Timothy J. McArdle, Junli Wang | 2018-02-13 |