Issued Patents 2018
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10163900 | Integration of vertical field-effect transistors and saddle fin-type field effect transistors | Ruilong Xie, Min Gyu Sung | 2018-12-25 |
| 10141446 | Formation of bottom junction in vertical FET devices | Hiroaki Niimi, Steven Bentley, Daniel Chanemougame | 2018-11-27 |
| 10121868 | Methods of forming epi semiconductor material on a thinned fin in the source/drain regions of a FinFET device | Yi Qi, Jianwei Peng, Hsien-Ching Lo, Hui Zhan | 2018-11-06 |
| 10083971 | Vertical SRAM structure with cross-coupling contacts penetrating through common gates to bottom S/D metal contacts | Hui Zang, Manfred Eller | 2018-09-25 |
| 10068978 | Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppression | Christopher M. Prindle | 2018-09-04 |
| 10008499 | Method to form silicide and contact at embedded epitaxial facet | James Walter Blatchford, Shashank S. Ekbote, Younsung Choi | 2018-06-26 |
| 9960086 | Methods, apparatus and system for self-aligned retrograde well doping for finFET devices | Mira Park, Steven Bentley, Amitabh Jain | 2018-05-01 |
| 9929236 | Active area shapes reducing device size | Bipul C. Paul | 2018-03-27 |
| 9911738 | Vertical-transport field-effect transistors with a damascene gate strap | Hiroaki Niimi, Brent A. Anderson, Junli Wang | 2018-03-06 |
| 9865704 | Single and double diffusion breaks on integrated circuit products comprised of FinFET devices | Ruilong Xie, Min Gyu Sung, Ryan Ryoung-Han Kim | 2018-01-09 |
| 9859125 | Block patterning method enabling merged space in SRAM with heterogeneous mandrel | Min Gyu Sung, Ruilong Xie, Chanro Park, Hoon Kim | 2018-01-02 |