Issued Patents 2018
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10121788 | Fin-type field effect transistors with single-diffusion breaks and method | Haiting Wang, Wei Zhao, Xusheng Wu, Hui Zang, Zhenyu Hu | 2018-11-06 |
| 10090382 | Integrated circuit structure including single diffusion break and end isolation region, and methods of forming same | Xinyuan Dou, Hui Zhan, Zhenyu Hu | 2018-10-02 |
| 10083873 | Semiconductor structure with uniform gate heights | Xing Zhang, Xinyuan Dou, Zhenyu Hu | 2018-09-25 |
| 10083874 | Gate cut method | Zhenyu Hu, Haiting Wang | 2018-09-25 |
| 10074732 | Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages | Xinyuan Dou, Hui Zang, Yanzhen Wang | 2018-09-11 |
| 10043713 | Method to reduce FinFET short channel gate height | Xinyuan Dou, Zhenyu Hu, Xing Zhang | 2018-08-07 |
| 10014296 | Fin-type field effect transistors with single-diffusion breaks and method | Xinyuan Dou, Sipeng Gu, Yanzhen Wang | 2018-07-03 |
| 9935104 | Fin-type field effect transistors with single-diffusion breaks and method | Haiting Wang, Wei Zhao, Xusheng Wu, Hui Zang, Zhenyu Hu | 2018-04-03 |