Issued Patents 2018
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10083858 | Interconnection lines having variable widths and partially self-aligned continuity cuts | Nicholas V. LiCausi | 2018-09-25 |
| 10069011 | Method for fabricating a FinFET metallization architecture using a self-aligned contact etch | — | 2018-09-04 |
| 10056458 | Siloxane and organic-based MOL contact patterning | Chang Ho Maeng, Andy Wei, Anthony Ozzello, Bharat Krishnan, Haifeng Sheng +9 more | 2018-08-21 |
| 10056373 | Transistor contacts self-aligned in two dimensions | Andy Wei, Mark A. Zaleski, Tuhin Guha Neogi, Jason E. Stephens, Jongwook Kye +1 more | 2018-08-21 |
| 10049985 | Contact line having insulating spacer therein and method of forming same | Veeraraghavan S. Basker, Keith H. Tabakman, Patrick Carpenter, Michael V. Aquilino | 2018-08-14 |
| 10043703 | Apparatus and method for forming interconnection lines having variable pitch and variable widths | Nicholas V. LiCausi | 2018-08-07 |
| 10026824 | Air-gap gate sidewall spacer and method | Daniel Chanemougame, Andre P. Labonte, Ruilong Xie, Lars Liebmann, Nigel G. Cave | 2018-07-17 |
| 10014390 | Inner spacer formation for nanosheet field-effect transistors with tall suspensions | Julien Frougier, Ruilong Xie | 2018-07-03 |
| 10002786 | Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts | Nicholas V. LiCausi | 2018-06-19 |
| 9960256 | Merged gate and source/drain contacts in a semiconductor device | Andy Wei | 2018-05-01 |
| 9905473 | Self-aligned contact etch for fabricating a FinFET | Vimal Kamineni, Michael V. Aquilino | 2018-02-27 |
| 9899268 | Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET device | Andy Wei | 2018-02-20 |
| 9887127 | Interconnection lines having variable widths and partially self-aligned continuity cuts | Nicholas V. LiCausi | 2018-02-06 |