| 10128352 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Sanjay C. Mehta |
2018-11-13 |
| 10090193 |
Integrated circuit structure incorporating a stacked pair of field effect transistors and a buried interconnect and method |
Daniel Chanemougame, Ruilong Xie |
2018-10-02 |
| 10079173 |
Methods of forming metallization lines on integrated circuit products and the resulting products |
Ruilong Xie, Daniel Chanemougame, Geng Han |
2018-09-18 |
| 10074564 |
Self-aligned middle of the line (MOL) contacts |
Daniel Chanemougame, Ruilong Xie |
2018-09-11 |
| 10042969 |
Reliability of an electronic device |
Rasit Onur Topaloglu |
2018-08-07 |
| 10026824 |
Air-gap gate sidewall spacer and method |
Daniel Chanemougame, Andre P. Labonte, Ruilong Xie, Nigel G. Cave, Guillaume Bouche |
2018-07-17 |
| 9978608 |
Fin patterning for a fin-type field-effect transistor |
Ruilong Xie, Min Gyu Sung, Nigel G. Cave |
2018-05-22 |
| 9947589 |
Methods of forming a gate contact for a transistor above an active region and the resulting device |
Chanro Park, Ruilong Xie, Andre P. Labonte, Nigel G. Cave, Mark V. Raymond |
2018-04-17 |
| 9941162 |
Self-aligned middle of the line (MOL) contacts |
Daniel Chanemougame, Ruilong Xie |
2018-04-10 |
| 9941163 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Sanjay C. Mehta |
2018-04-10 |
| 9929157 |
Tall single-fin fin-type field effect transistor structures and methods |
Ruilong Xie, Andreas Knorr, Murat Kerem Akarvardar, Nigel G. Cave |
2018-03-27 |
| 9929049 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Sanjay C. Mehta |
2018-03-27 |
| 9929048 |
Middle of the line (MOL) contacts with two-dimensional self-alignment |
Ruilong Xie, Chanro Park, Andre P. Labonte |
2018-03-27 |
| 9911619 |
Fin cut with alternating two color fin hardmask |
Ruilong Xie, Hoon Kim, Catherine B. Labelle, Chanro Park, Min Gyu Sung |
2018-03-06 |
| 9899259 |
Gate tie-down enablement with inner spacer |
Su Chen Fan, Andre P. Labonte, Sanjay C. Mehta |
2018-02-20 |
