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Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device |
Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Christopher J. Penny, Michael Rizzolo |
2018-10-23 |
| 10083905 |
Skip-vias bypassing a metallization level at minimum pitch |
Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Christopher J. Penny, Michael Rizzolo |
2018-09-25 |
| 9997451 |
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device |
Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Christopher J. Penny, Michael Rizzolo |
2018-06-12 |
| 9966337 |
Fully aligned via with integrated air gaps |
Benjamin D. Briggs, Lawrence A. Clevenger, Christopher J. Penny, Michael Rizzolo, Hosadurga Shobha |
2018-05-08 |
| 9960078 |
Reflow interconnect using Ru |
Lawrence A. Clevenger, Su Chen Fan, Koichi Motoyama, Wei Wang, Chih-Chao Yang |
2018-05-01 |
| 9911651 |
Skip-vias bypassing a metallization level at minimum pitch |
Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Christopher J. Penny, Michael Rizzolo |
2018-03-06 |
| 9899256 |
Self-aligned airgaps with conductive lines and vias |
Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Christopher J. Penny, Michael Rizzolo |
2018-02-20 |
| 9899338 |
Structure and fabrication method for enhanced mechanical strength crack stop |
Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Christopher J. Penny, Michael Rizzolo |
2018-02-20 |
