Issued Patents 2018
Showing 51–75 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9991339 | Bulk to silicon on insulator device | Terence B. Hook, Joshua M. Rubin | 2018-06-05 |
| 9991366 | Anchored stress-generating active semiconductor regions for semiconductor-on-insulator FinFET | Veeraraghavan S. Basker, Krishna Iyengar, Chun-Chen Yeh | 2018-06-05 |
| 9984880 | Well and punch through stopper formation using conformal doping | Effendi Leobandung | 2018-05-29 |
| 9985130 | Salicide formation on replacement metal gate finFET devices | Effendi Leobandung, Soon-Cheon Seo, Chun-Chen Yeh | 2018-05-29 |
| 9985100 | Localized and self-aligned punch through stopper doping for finFET | Effendi Leobandung | 2018-05-29 |
| 9985032 | Selectively degrading current resistance of field effect transistor devices | Veeraraghavan S. Basker, Effendi Leobandung, Dieter Wendel | 2018-05-29 |
| 9985027 | Stable multiple threshold voltage devices on replacement metal gate CMOS devices | Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok | 2018-05-29 |
| 9984893 | Fin cut for taper device | Kangguo Cheng, Ruilong Xie | 2018-05-29 |
| 9978871 | Bulk to silicon on insulator device | Terence B. Hook, Joshua M. Rubin | 2018-05-22 |
| 9978750 | Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices | Praneet Adusumilli, Oleg Gluschenkov, Dechao Guo, Zuoguang Liu, Rajasekhar Venigalla | 2018-05-22 |
| 9966430 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Kangguo Cheng, Xin Miao, Ruilong Xie | 2018-05-08 |
| 9960271 | Method of forming vertical field effect transistors with different threshold voltages and the resulting integrated circuit structure | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2018-05-01 |
| 9953977 | FinFET semiconductor device | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-04-24 |
| 9953857 | Semiconductor device with buried local interconnects | Effendi Leobandung | 2018-04-24 |
| 9947586 | Tunneling fin type field effect transistor with epitaxial source and drain regions | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-04-17 |
| 9947793 | Vertical pillar-type field effect transistor and method | Ruilong Xie, Kangguo Cheng | 2018-04-17 |
| 9947774 | Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping | Kangguo Cheng, Ruilong Xie | 2018-04-17 |
| 9947748 | Dielectric isolated SiGe fin on bulk substrate | Huiming Bu, Shogo Mochizuki | 2018-04-17 |
| 9947744 | Nanowire semiconductor device including lateral-etch barrier region | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-04-17 |
| 9941175 | Dielectric isolated SiGe fin on bulk substrate | Huiming Bu, Shogo Mochizuki | 2018-04-10 |
| 9935180 | Fin cut for taper device | Kangguo Cheng, Ruilong Xie | 2018-04-03 |
| 9935018 | Methods of forming vertical transistor devices with different effective gate lengths | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2018-04-03 |
| 9929247 | Etch stop for airgap protection | Kangguo Cheng, Ruilong Xie | 2018-03-27 |
| 9929255 | Robust gate spacer for semiconductor devices | Effendi Leobandung | 2018-03-27 |
| 9929246 | Forming air-gap spacer for vertical field effect transistor | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-03-27 |