Issued Patents 2018
Showing 76–100 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9923074 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Sanjay C. Mehta | 2018-03-20 |
| 9923055 | Inner spacer for nanosheet transistors | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-03-20 |
| 9922942 | Support for long channel length nanowire transistors | Karthik Balakrishnan, Isaac Lauer, Jeffrey W. Sleight | 2018-03-20 |
| 9917162 | Fabrication of vertical field effect transistor structure with controlled gate length | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-03-13 |
| 9917152 | Nanosheet transistors on bulk material | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-03-13 |
| 9917081 | Semiconductor device including finFET and fin varactor | Kangguo Cheng, Junli Wang, Ruilong Xie | 2018-03-13 |
| 9911657 | Semiconductor device including finFET and fin varactor | Kangguo Cheng, Junli Wang, Ruilong Xie | 2018-03-06 |
| 9905665 | Replacement metal gate stack for diffusion prevention | Takashi Ando, Johnathan E. Faltermeier, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok | 2018-02-27 |
| 9905671 | Forming a gate contact in the active area | Kangguo Cheng, Ruilong Xie | 2018-02-27 |
| 9899524 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Veeraraghavan S. Basker, Zuoguang Liu, Xin Miao | 2018-02-20 |
| 9899525 | Increased contact area for finFETs | Veeraraghavan S. Basker, Chung-Hsun Lin, Zuoguang Liu, Chun-Chen Yeh | 2018-02-20 |
| 9899373 | Forming vertical transistors and metal-insulator-metal capacitors on the same chip | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-02-20 |
| 9893171 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-02-13 |
| 9892961 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Sanjay C. Mehta +2 more | 2018-02-13 |
| 9881925 | Mirror contact capacitor | Terence B. Hook, Joshua M. Rubin | 2018-01-30 |
| 9882024 | Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins | Kangguo Cheng, Zuoguang Liu, Ruilong Xie | 2018-01-30 |
| 9881919 | Well and punch through stopper formation using conformal doping | Effendi Leobandung | 2018-01-30 |
| 9870958 | Forming CMOSFET structures with different contact liners | Kangguo Cheng, Zuoguang Liu | 2018-01-16 |
| 9871041 | Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistors | Kangguo Cheng, Zuoguang Liu, Sanjay C. Mehta | 2018-01-16 |
| 9870952 | Formation of VFET and finFET | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-01-16 |
| 9865703 | High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process | Takashi Ando, Veeraraghavan S. Basker, Johnathan E. Faltermeier, Hemanth Jagannathan | 2018-01-09 |
| 9865508 | Method and structure to fabricate closely packed hybrid nanowires at scaled pitch | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-01-09 |
| 9859281 | Dual FIN integration for electron and hole mobility enhancement | Chia-Yu Chen, Zuoguang Liu, Miaomiao Wang | 2018-01-02 |
| 9859286 | Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices | Veeraraghavan S. Basker, Dechao Guo, Zuoguang Liu, Chun-Chen Yeh | 2018-01-02 |
| 9859275 | Silicon nitride fill for PC gap regions to increase cell density | Dechao Guo, Zuoguang Liu, Chun-Chen Yeh | 2018-01-02 |