Issued Patents 2017
Showing 26–50 of 92 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9741716 | Forming vertical and horizontal field effect transistors on the same substrate | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2017-08-22 |
| 9735111 | Dual metal-insulator-semiconductor contact structure and formulation method | Takashi Ando, Hiroaki Niimi | 2017-08-15 |
| 9735248 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Sanjay C. Mehta | 2017-08-15 |
| 9728462 | Stable multiple threshold voltage devices on replacement metal gate CMOS devices | Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok | 2017-08-08 |
| 9728624 | Semiconductor testing devices | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2017-08-08 |
| 9728537 | Dual fin integration for electron and hole mobility enhancement | Chia-Yu Chen, Zuoguang Liu, Miaomiao Wang | 2017-08-08 |
| 9722022 | Sidewall image transfer nanosheet | Effendi Leobandung | 2017-08-01 |
| 9716170 | Reduced capacitance in vertical transistors by preventing excessive overlap between the gate and the source/drain | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2017-07-25 |
| 9716160 | Extended contact area using undercut silicide extensions | Effendi Leobandung, Soon-Cheon Seo, Chun-Chen Yeh | 2017-07-25 |
| 9711618 | Fabrication of vertical field effect transistor structure with controlled gate length | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2017-07-18 |
| 9711645 | Method and structure for multigate FinFET device epi-extension junction control by hydrogen treatment | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2017-07-18 |
| 9711501 | Interlayer via | Veeraraghavan S. Basker, Lawrence A. Clevenger, Terence B. Hook, Joshua M. Rubin | 2017-07-18 |
| 9704867 | Dual fin integration for electron and hole mobility enhancement | Chia-Yu Chen, Zuoguang Liu, Miaomiao Wang | 2017-07-11 |
| 9704848 | Electrostatic discharge devices and methods of manufacture | Huiming Bu, Junjun Li, Theodorus E. Standaert | 2017-07-11 |
| 9698225 | Localized and self-aligned punch through stopper doping for finFET | Effendi Leobandung | 2017-07-04 |
| 9698230 | MOSFET with asymmetric self-aligned contact | Kangguo Cheng, Xin Miao, Ruilong Xie | 2017-07-04 |
| 9698061 | Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes | Veeraraghavan S. Basker, Huiming Bu | 2017-07-04 |
| 9691715 | Support for long channel length nanowire transistors | Karthik Balakrishnan, Isaac Lauer, Jeffrey W. Sleight | 2017-06-27 |
| 9691763 | Multi-gate FinFET semiconductor device with flexible design width | Veeraraghavan S. Basker, Chun-Chen Yeh | 2017-06-27 |
| 9685537 | Gate length control for vertical transistors and integration with replacement gate flow | Ruilong Xie, Kangguo Cheng, Chun-Chen Yeh | 2017-06-20 |
| 9680020 | Increased contact area for FinFETs | Veeraraghavan S. Basker, Chung-Hsun Lin, Zuoguang Liu, Chun-Chen Yeh | 2017-06-13 |
| 9673056 | Method to improve finFET cut overlay | Effendi Leobandung | 2017-06-06 |
| 9666726 | Localized fin width scaling using a hydrogen anneal | Veeraraghavan S. Basker, Shogo Mochizuki, Chun-Chen Yeh | 2017-05-30 |
| 9659785 | Fin cut for taper device | Kangguo Cheng, Ruilong Xie | 2017-05-23 |
| 9660035 | Semiconductor device including superlattice SiGe/Si fin structure | Veeraraghavan S. Basker, Chun-Chen Yeh | 2017-05-23 |