Issued Patents 2017
Showing 76–92 of 92 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9570554 | Robust gate spacer for semiconductor devices | Effendi Leobandung | 2017-02-14 |
| 9570590 | Selective oxidation of buried silicon-germanium to form tensile strained silicon FinFETs | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin | 2017-02-14 |
| 9564440 | Spacer chamfering gate stack scheme | Hyun-Jin Cho, Hui Zang | 2017-02-07 |
| 9564358 | Forming reliable contacts on tight semiconductor pitch | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Ruilong Xie | 2017-02-07 |
| 9558991 | Formation of isolation surrounding well implantation | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert | 2017-01-31 |
| 9559191 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2017-01-31 |
| 9552988 | Tone inverted directed self-assembly (DSA) fin patterning | Hong He, Chi-Chun Liu, Alexander Reznicek, Chiahsun Tseng | 2017-01-24 |
| 9548306 | Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicides | Veeraraghavan S. Basker, Andres Bryant | 2017-01-17 |
| 9548388 | Forming field effect transistor device spacers | Rama Kambhampati, Junli Wang, Ruilong Xie | 2017-01-17 |
| 9548379 | Asymmetric multi-gate FinFET | Veeraraghavan S. Basker, Andres Bryant, Huiming Bu, Sivananda K. Kanakasabapathy | 2017-01-17 |
| 9548250 | Semiconductor device including self-aligned gate structure and improved gate spacer topography | Veeraraghavan S. Basker | 2017-01-17 |
| 9543435 | Asymmetric multi-gate finFET | Veeraraghavan S. Basker, Andres Bryant, Huiming Bu, Sivananda K. Kanakasabapathy | 2017-01-10 |
| 9543407 | Low-K spacer for RMG finFET formation | Hong He, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2017-01-10 |
| 9536791 | Stable multiple threshold voltage devices on replacement metal gate CMOS devices | Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok | 2017-01-03 |
| 9537015 | Localized fin width scaling using a hydrogen anneal | Veeraraghavan S. Basker, Shogo Mochizuki, Chun-Chen Yeh | 2017-01-03 |
| 9536982 | Etch stop for airgap protection | Kangguo Cheng, Ruilong Xie | 2017-01-03 |
| 9536981 | Field effect transistor device spacers | Xiuyu Cai, Sanjay C. Mehta | 2017-01-03 |