Issued Patents 2016
Showing 51–75 of 87 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9379017 | Method of forming a semiconductor structure including a plurality of fins and an alignment/overlay mark | Min Gyu Sung, Chanro Park, Hoon Kim | 2016-06-28 |
| 9373721 | Methods of forming a non-planar ultra-thin body semiconductor device and the resulting devices | Ajey Poovannummoottil Jacob, Michael Hargrove | 2016-06-21 |
| 9362181 | Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products | Min Gyu Sung, Ryan Ryoung-Han Kim, Kwan-Yong Lim, Chanro Park | 2016-06-07 |
| 9362403 | Buried fin contact structures on FinFET semiconductor devices | Ryan Ryoung-Han Kim, William J. Taylor, Jr. | 2016-06-07 |
| 9362279 | Contact formation for semiconductor device | Andy Wei, William J. Taylor, Jr., Ryan Ryoung-Han Kim, Kwan-Yong Lim, Chanro Park | 2016-06-07 |
| 9356149 | Silicide protection during contact metallization and resulting semiconductor structures | Vimal Kamineni, Robert J. Miller | 2016-05-31 |
| 9349840 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ajey Poovannummoottil Jacob, Witold P. Maszara, Kangguo Cheng, Ali Khakifirooz | 2016-05-24 |
| 9349598 | Gate contact with vertical isolation from source-drain | David V. Horak, Shom Ponoth, Balasubramanian Pranatharthiharan | 2016-05-24 |
| 9337101 | Methods for selectively removing a fin when forming FinFET devices | Min Gyu Sung, Hoon Kim, Chanro Park | 2016-05-10 |
| 9337050 | Methods of forming fins for finFET semiconductor devices and the selective removal of such fins | Xiuyu Cai, Kangguo Cheng | 2016-05-10 |
| 9330972 | Methods of forming contact structures for semiconductor devices and the resulting devices | Vimal Kamineni, William J. Taylor, Jr. | 2016-05-03 |
| 9324656 | Methods of forming contacts on semiconductor devices and the resulting devices | Andre P. Labonte | 2016-04-26 |
| 9318388 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Vimal Kamineni, Abner Bello, Nicholas V. LiCausi, Wenhui Wang, Michael Wedlake +1 more | 2016-04-19 |
| 9318579 | Method for making a semiconductor device while avoiding nodules on a gate | Qing Liu, Xiuyu Cai, Kejia Wang, Chun-Chen Yeh | 2016-04-19 |
| 9318552 | Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide contact area and the resulting devices | William J. Taylor, Jr., Ajey Poovannummoottil Jacob | 2016-04-19 |
| 9318342 | Methods of removing fins for finfet semiconductor devices | Andreas Knorr, Ajey Poovannummoottil Jacob, Michael Hargrove | 2016-04-19 |
| 9312388 | Methods of forming epitaxial semiconductor material in trenches located above the source and drain regions of a semiconductor device | Hoon Kim, Chanro Park, Min Gyu Sung | 2016-04-12 |
| 9312387 | Methods of forming FinFET devices with alternative channel materials | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Michael Hargrove | 2016-04-12 |
| 9312182 | Forming gate and source/drain contact openings by performing a common etch patterning process | William J. Taylor, Jr., Min Gyu Sung | 2016-04-12 |
| 9306001 | Uniformly doped leakage current stopper to counter under channel leakage currents in bulk FinFET devices | Xiuyu Cai, Qing Liu, Chun-Chen Yeh | 2016-04-05 |
| 9299721 | Method for making semiconductor device with different fin sets | Qing Liu, Xiuyu Cai, Chun-Chen Yeh, Kejia Wang, Daniel Chanemougame | 2016-03-29 |
| 9299781 | Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material | William J. Taylor, Jr., Ryan Ryoung-Han Kim | 2016-03-29 |
| 9287130 | Method for single fin cuts using selective ion implants | Xiuyu Cai, Ajey Poovannummoottil Jacob, Bruce B. Doris, Kangguo Cheng, Jason R. Cantone +7 more | 2016-03-15 |
| 9281382 | Method for making semiconductor device with isolation pillars between adjacent semiconductor fins | Qing Liu, Xiuyu Cai, Chun-Chen Yeh | 2016-03-08 |
| 9269815 | FinFET semiconductor device with a recessed liner that defines a fin height of the FinFet device | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2016-02-23 |