Issued Patents 2004
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6835618 | Epitaxially grown fin for FinFET | Srikanteswara Dakshina-Murthy, Bin Yu | 2004-12-28 |
| 6828259 | Enhanced transistor gate using E-beam radiation | Philip A. Fisher, Marina V. Plat, Russell R.A. Callahan, Ashok M. Khathuria | 2004-12-07 |
| 6797552 | Method for defect reduction and enhanced control over critical dimensions and profiles in semiconductor devices | Mark S. Chang, Douglas J. Bonser, Marina V. Plat, Scott A. Bell, Srikanteswara Dakshina-Murthy | 2004-09-28 |
| 6790782 | Process for fabrication of a transistor gate including high-K gate dielectric with in-situ resist trim, gate etch, and high-K dielectric removal | Cyrus E. Tabery, Ming-Ren Lin | 2004-09-14 |
| 6787476 | Etch stop layer for etching FinFET gate over a large topography | Srikanteswara Dakshina-Murthy, Cyrus E. Tabery, Bin Yu | 2004-09-07 |
| 6787854 | Method for forming a fin in a finFET device | Shibly S. Ahmed, Srikanteswara Dakshina-Murthy, Cyrus E. Tabery, Haihong Wang, Bin Yu | 2004-09-07 |
| 6773998 | Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning | Philip A. Fisher, Marina V. Plat, Christopher F. Lyons, Scott A. Bell, Douglas J. Bonser +2 more | 2004-08-10 |
| 6764966 | Spacers with a graded dielectric constant for semiconductor devices having a high-K dielectric | William G. En, Arvind Halliyal, Ming-Ren Lin, Minh Van Ngo | 2004-07-20 |
| 6764949 | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication | Douglas J. Bonser, Marina V. Plat, Scott A. Bell, Darin A. Chan, Philip A. Fisher +6 more | 2004-07-20 |
| 6764947 | Method for reducing gate line deformation and reducing gate line widths in semiconductor devices | Darin A. Chan, Douglas J. Bonser, Marina V. Plat, Marilyn I. Wright, Lu You +2 more | 2004-07-20 |
| 6750127 | Method for fabricating a semiconductor device using amorphous carbon having improved etch resistance | Mark S. Chang, Darin A. Chan, Lu You, Scott A. Bell, Srikanteswara Dakshina-Murthy +1 more | 2004-06-15 |
| 6740566 | Ultra-thin resist shallow trench process using high selectivity nitride etch | Christopher F. Lyons, Scott A. Bell, Harry J. Levinson, Khanh B. Nguyen, Fei Wang | 2004-05-25 |