Issued Patents 2004
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6833587 | Heat removal in SOI devices using a buried oxide layer/conductive layer combination | — | 2004-12-21 |
| 6812119 | Narrow fins by oxidation in double-gate finfet | Shibly S. Ahmed, Haihong Wang, Bin Yu | 2004-11-02 |
| 6800910 | FinFET device incorporating strained silicon in the channel region | Jung-Suk Goo, Haihong Wang, Qi Xiang | 2004-10-05 |
| 6790782 | Process for fabrication of a transistor gate including high-K gate dielectric with in-situ resist trim, gate etch, and high-K dielectric removal | Chih-Yuh Yang, Cyrus E. Tabery | 2004-09-14 |
| 6787864 | Mosfets incorporating nickel germanosilicided gate and methods for their formation | Eric N. Paton, Qi Xiang, Paul R. Besser, Minh Van Ngo, Haihong Wang | 2004-09-07 |
| 6764966 | Spacers with a graded dielectric constant for semiconductor devices having a high-K dielectric | William G. En, Arvind Halliyal, Minh Van Ngo, Chih-Yuh Yang | 2004-07-20 |
| 6764898 | Implantation into high-K dielectric material after gate etch to facilitate removal | William G. En, Joong S. Jeon, Minh Van Ngo | 2004-07-20 |
| 6762448 | FinFET device with multiple fin structures | Haihong Wang, Bin Yu | 2004-07-13 |