Issued Patents 2004
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6800910 | FinFET device incorporating strained silicon in the channel region | Ming-Ren Lin, Haihong Wang, Qi Xiang | 2004-10-05 |
| 6756276 | Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication | Qi Xiang, Haihong Wang | 2004-06-29 |
| 6730576 | Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer | Haihong Wang, Paul R. Besser, Minh Van Ngo, Eric N. Paton, Qi Xiang | 2004-05-04 |