Issued Patents 2004
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6835662 | Partially de-coupled core and periphery gate module process | Jeff P. Erhardt, Hiroyuki Kinoshita | 2004-12-28 |
| 6825115 | Post silicide laser thermal annealing to avoid dopant deactivation | Qi Xiang, Robert B. Ogle, Eric N. Paton, Bin Yu | 2004-11-30 |
| 6812106 | Reduced dopant deactivation of source/drain extensions using laser thermal annealing | Qi Xiang, Robert B. Ogle, Eric N. Paton, Bin Yu | 2004-11-02 |
| 6808591 | Model based metal overetch control | Khoi A. Phan, Bharath Rangarajan, Christopher F. Lyons, Steven C. Avanzino, Ramkumar Subramanian +1 more | 2004-10-26 |
| 6790782 | Process for fabrication of a transistor gate including high-K gate dielectric with in-situ resist trim, gate etch, and high-K dielectric removal | Chih-Yuh Yang, Ming-Ren Lin | 2004-09-14 |
| 6787439 | Method using planarizing gate material to improve gate critical dimension in semiconductor devices | Shibly S. Ahmed, Haihong Wang, Bin Yu | 2004-09-07 |
| 6787854 | Method for forming a fin in a finFET device | Chih-Yuh Yang, Shibly S. Ahmed, Srikanteswara Dakshina-Murthy, Haihong Wang, Bin Yu | 2004-09-07 |
| 6787476 | Etch stop layer for etching FinFET gate over a large topography | Srikanteswara Dakshina-Murthy, Chih-Yuh Yang, Bin Yu | 2004-09-07 |
| 6780789 | Laser thermal oxidation to form ultra-thin gate oxide | Bin Yu, Robert B. Ogle, Eric N. Paton, Qi Xiang | 2004-08-24 |
| 6780708 | METHOD OF FORMING CORE AND PERIPHERY GATES INCLUDING TWO CRITICAL MASKING STEPS TO FORM A HARD MASK IN A CORE REGION THAT INCLUDES A CRITICAL DIMENSION LESS THAN ACHIEVABLE AT A RESOLUTION LIMIT OF LITHOGRAPHY | Hiroyuki Kinoshita, Yu Sun, Basab Banerjee, Christopher Foster, John R. Behnke | 2004-08-24 |
| 6771356 | Scatterometry of grating structures to monitor wafer stress | Christopher F. Lyons, Bhanwar Singh, Steven C. Avanzino, Khoi A. Phan, Bharath Rangarajan +1 more | 2004-08-03 |
| 6758612 | System and method for developer endpoint detection by reflectometry or scatterometry | Bharath Rangarajan, Bhanwar Singh, Ramkumar Subramanian | 2004-07-06 |
| 6746944 | Low nisi/si interface contact resistance with preamorphizing and laser thermal annealing | Qi Xiang, Robert B. Ogle, Eric N. Paton, Bin Yu | 2004-06-08 |
| 6743689 | Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensions | Eric N. Paton, Robert B. Ogle, Qi Xiang, Bin Yu | 2004-06-01 |
| 6706571 | Method for forming multiple structures in a semiconductor device | Bin Yu, Judy Xilin An, Haihong Wang | 2004-03-16 |
| 6684172 | Sensor to predict void free films using various grating structures and characterize fill performance | Ramkumar Subramanian, Steven C. Avanzino, Christopher F. Lyons, Khoi A. Phan, Bharath Rangarajan +1 more | 2004-01-27 |
| 6680250 | Formation of deep amorphous region to separate junction from end-of-range defects | Eric N. Paton, Robert B. Ogle, Qi Xiang, Bin Yu | 2004-01-20 |
| 6673684 | Use of diamond as a hard mask material | Richard J. Huang, Philip A. Fisher | 2004-01-06 |