RO

Robert B. Ogle

AM AMD: 12 patents #30 of 1,035Top 3%
📍 San Jose, CA: #13 of 2,805 inventorsTop 1%
🗺 California: #122 of 28,370 inventorsTop 1%
Overall (2004): #874 of 270,089Top 1%
12
Patents 2004

Issued Patents 2004

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
6825115 Post silicide laser thermal annealing to avoid dopant deactivation Qi Xiang, Eric N. Paton, Cyrus E. Tabery, Bin Yu 2004-11-30
6812106 Reduced dopant deactivation of source/drain extensions using laser thermal annealing Qi Xiang, Eric N. Paton, Cyrus E. Tabery, Bin Yu 2004-11-02
6803272 Use of high-K dielectric material in modified ONO structure for semiconductor devices Arvind Halliyal, Mark T. Ramsbey, Kuo-Tung Chang, Nicholas H. Tripsas 2004-10-12
6798002 Dual-purpose anti-reflective coating and spacer for flash memory and other dual gate technologies and method of forming Tuan Pham, Mark T. Ramsbey 2004-09-28
6780789 Laser thermal oxidation to form ultra-thin gate oxide Bin Yu, Eric N. Paton, Cyrus E. Tabery, Qi Xiang 2004-08-24
6746944 Low nisi/si interface contact resistance with preamorphizing and laser thermal annealing Qi Xiang, Eric N. Paton, Cyrus E. Tabery, Bin Yu 2004-06-08
6743689 Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensions Eric N. Paton, Cyrus E. Tabery, Qi Xiang, Bin Yu 2004-06-01
6716702 Method of forming flash memory having pre-interpoly dielectric treatment layer Arvind Halliyal 2004-04-06
6709927 Process for treating ONO dielectric film of a floating gate memory cell Arvind Halliyal 2004-03-23
6689682 Multilayer anti-reflective coating for semiconductor lithography Tuan Pham, Marina V. Plat 2004-02-10
6680250 Formation of deep amorphous region to separate junction from end-of-range defects Eric N. Paton, Cyrus E. Tabery, Qi Xiang, Bin Yu 2004-01-20
6674138 Use of high-k dielectric materials in modified ONO structure for semiconductor devices Arvind Halliyal, Mark T. Ramsbey, Kuo-Tung Chang, Nicholas H. Tripsas 2004-01-06