Issued Patents 2004
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6833588 | Semiconductor device having a U-shaped gate structure | Bin Yu, Shibly S. Ahmed, Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang | 2004-12-21 |
| 6815268 | Method for forming a gate in a FinFET device | Bin Yu, Srikanteswara Dakshina-Murthy | 2004-11-09 |
| 6803631 | Strained channel finfet | Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang, Bin Yu | 2004-10-12 |
| 6800885 | Asymmetrical double gate or all-around gate MOSFET devices and methods for making same | Bin Yu | 2004-10-05 |
| 6765227 | Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and method of fabrication using wafer bonding | Bin Yu, William G. En, Concetta Riccobene | 2004-07-20 |
| 6765303 | FinFET-based SRAM cell | Zoran Krivokapic, Matthew S. Buynoski | 2004-07-20 |
| 6762483 | Narrow fin FinFET | Zoran Krivokapic, Srikanteswara Dakshina-Murthy, Haihong Wang, Bin Yu | 2004-07-13 |
| 6716686 | Method for forming channels in a finfet device | Matthew S. Buynoski, Bin Yu | 2004-04-06 |
| 6717212 | Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure | Dong-Hyuk Ju, William G. En, Srinath Krishnan, Concetta Riccobene, Zoran Krivokapic +1 more | 2004-04-06 |
| 6716690 | Uniformly doped source/drain junction in a double-gate MOSFET | Haihong Wang, Bin Yu | 2004-04-06 |
| 6709982 | Double spacer FinFET formation | Matthew S. Buynoski, Haihong Wang, Bin Yu | 2004-03-23 |
| 6706614 | Silicon-on-insulator (SOI) transistor having partial hetero source/drain junctions fabricated with high energy germanium implantation. | Bin Yu | 2004-03-16 |
| 6706571 | Method for forming multiple structures in a semiconductor device | Bin Yu, Cyrus E. Tabery, Haihong Wang | 2004-03-16 |
| 6696725 | Dual-gate MOSFET with channel potential engineering | Bin Yu | 2004-02-24 |