Issued Patents 2004
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6803178 | Two mask photoresist exposure pattern for dense and isolated regions | Ramkumar Subramanian, Todd P. Lukanc, Marina V. Plat, Uzodinma Okoroanyanwu, Hung-Eli Kim | 2004-10-12 |
| 6797552 | Method for defect reduction and enhanced control over critical dimensions and profiles in semiconductor devices | Mark S. Chang, Douglas J. Bonser, Marina V. Plat, Chih-Yuh Yang, Srikanteswara Dakshina-Murthy | 2004-09-28 |
| 6773998 | Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning | Philip A. Fisher, Marina V. Plat, Chih-Yuh Yang, Christopher F. Lyons, Douglas J. Bonser +2 more | 2004-08-10 |
| 6764947 | Method for reducing gate line deformation and reducing gate line widths in semiconductor devices | Darin A. Chan, Douglas J. Bonser, Marina V. Plat, Marilyn I. Wright, Chih-Yuh Yang +2 more | 2004-07-20 |
| 6764949 | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication | Douglas J. Bonser, Marina V. Plat, Chih-Yuh Yang, Darin A. Chan, Philip A. Fisher +6 more | 2004-07-20 |
| 6753266 | Method of enhancing gate patterning properties with reflective hard mask | Todd P. Lukanc, Christopher F. Lyons, Marina V. Plat, Ramkumar Subramanian | 2004-06-22 |
| 6750127 | Method for fabricating a semiconductor device using amorphous carbon having improved etch resistance | Mark S. Chang, Darin A. Chan, Chih-Yuh Yang, Lu You, Srikanteswara Dakshina-Murthy +1 more | 2004-06-15 |
| 6740566 | Ultra-thin resist shallow trench process using high selectivity nitride etch | Christopher F. Lyons, Harry J. Levinson, Khanh B. Nguyen, Fei Wang, Chih-Yuh Yang | 2004-05-25 |
| 6737222 | Dual damascene process utilizing a bi-layer imaging layer | Ramkumar Subramanian, Christopher F. Lyons, Marina V. Plat | 2004-05-18 |
| 6689541 | Process for forming a photoresist mask | Todd P. Lukanc, Christopher F. Lyons, Marina V. Plat, Ramkumar Subramanian | 2004-02-10 |