Issued Patents All Time
Showing 51–74 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8003459 | Method for forming semiconductor devices with active silicon height variation | David E. Brown, Hans Van Meer | 2011-08-23 |
| 7666735 | Method for forming semiconductor devices with active silicon height variation | David E. Brown, Hans Van Meer | 2010-02-23 |
| 7053400 | Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility | David E. Brown | 2006-05-30 |
| 7009226 | In-situ nitride/oxynitride processing with reduced deposition surface pattern sensitivity | — | 2006-03-07 |
| 6955931 | Method for detecting silicide encroachment of a gate electrode in a semiconductor arrangement | David E. Brown | 2005-10-18 |
| 6492281 | Method of fabricating conductor structures with metal comb bridging avoidance | Shengnian Song, Bradley Marc Davis | 2002-12-10 |
| 6417014 | Method and apparatus for reducing wafer to wafer deposition variation | Kin-Sang Lam | 2002-07-09 |
| 6383874 | In-situ stack for high volume production of isolation regions | Mark I. Gardner, Robert Anderson | 2002-05-07 |
| 6372668 | Method of forming silicon oxynitride films | Homi E. Nariman, Hartmut Ruelke | 2002-04-16 |
| 6265283 | Self-aligning silicon oxynitride stack for improved isolation structure | Homi E. Nariman, H. Jim Fulford | 2001-07-24 |
| 6259133 | Method for forming an integrated circuit memory cell and product thereof | Mark I. Gardner | 2001-07-10 |
| 6257760 | Using a superlattice to determine the temperature of a semiconductor fabrication process | Bradley Marc Davis, Shengnian Song | 2001-07-10 |
| 6258730 | Ultra-thin gate oxide formation using an N2O plasma | Mark I. Gardner, Shengnian Song | 2001-07-10 |
| 6251800 | Ultrathin deposited gate dielectric formation using low-power, low-pressure PECVD for improved semiconductor device performance | Mark I. Gardner, Charles E. May | 2001-06-26 |
| 6242367 | Method of forming silicon nitride films | Minh Van Ngo | 2001-06-05 |
| 6171917 | Transistor sidewall spacers composed of silicon nitride CVD deposited from a high density plasma source | Thomas E. Spikes, Jr., Fred N. Hause | 2001-01-09 |
| 6150286 | Method of making an ultra thin silicon nitride film | Mark I. Gardner, Shengnian Song | 2000-11-21 |
| 6140688 | Semiconductor device with self-aligned metal-containing gate | Mark I. Gardner | 2000-10-31 |
| 6124217 | In-situ SiON deposition/bake/TEOS deposition process for reduction of defects in interlevel dielectric for integrated circuit interconnects | Mark I. Gardner, Minh Van Ngo | 2000-09-26 |
| 6114219 | Method of manufacturing an isolation region in a semiconductor device using a flowable oxide-generating material | Thomas E. Spikes, Jr., Robert Dawson | 2000-09-05 |
| 6060404 | In-situ deposition of stop layer and dielectric layer during formation of local interconnects | Minh Van Ngo, Darin A. Chan, Terri Jo Kitson, John Caffall | 2000-05-09 |
| 6051876 | Semiconductor device with a graded passivation layer | Mark I. Gardner, Daniel Kadosh | 2000-04-18 |
| 6037244 | Method of manufacturing a semiconductor device using advanced contact formation | Mark I. Gardner, Thomas E. Spikes, Jr., Robert Paiz, Frederick N. Hause | 2000-03-14 |
| 6022749 | Using a superlattice to determine the temperature of a semiconductor fabrication process | Bradley Marc Davis, Shengnian Song | 2000-02-08 |