| 6972853 |
Methods of calibrating and controlling stepper exposure processes and tools, and system for accomplishing same |
James Broc Stirton |
2005-12-06 |
| 6933158 |
Method of monitoring anneal processes using scatterometry, and system for performing same |
Kevin R. Lensing, James Broc Stirton, Steven P. Reeves |
2005-08-23 |
| 6927080 |
Structures for analyzing electromigration, and methods of using same |
James Broc Stirton, Kevin R. Lensing, Steven P. Reeves |
2005-08-09 |
| 6881594 |
Method of using scatterometry for analysis of electromigration, and structures for performing same |
James Broc Stirton, Steven P. Reeves, Kevin R. Lensing |
2005-04-19 |
| 6791697 |
Scatterometry structure with embedded ring oscillator, and methods of using same |
— |
2004-09-14 |
| 6767835 |
Method of making a shaped gate electrode structure, and device comprising same |
David E. Brown |
2004-07-27 |
| 6742168 |
Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device |
— |
2004-05-25 |
| 6660543 |
Method of measuring implant profiles using scatterometric techniques wherein dispersion coefficients are varied based upon depth |
James Broc Stirton, Kevin R. Lensing, Steven P. Reeves |
2003-12-09 |
| 6372668 |
Method of forming silicon oxynitride films |
Sey-Ping Sun, Hartmut Ruelke |
2002-04-16 |
| 6265283 |
Self-aligning silicon oxynitride stack for improved isolation structure |
Sey-Ping Sun, H. Jim Fulford |
2001-07-24 |
| 6249032 |
Semiconductor device having patterned metal layer over a polysilicon line and method of fabrication thereof |
H. Jim Fulford, Charles E. May |
2001-06-19 |
| 6157081 |
High-reliability damascene interconnect formation for semiconductor fabrication |
H. Jim Fulford |
2000-12-05 |
| 6146952 |
Semiconductor device having self-aligned asymmetric source/drain regions and method of fabrication thereof |
H. Jim Fulford, Charles E. May |
2000-11-14 |
| 6096643 |
Method of fabricating a semiconductor device having polysilicon line with extended silicide layer |
H. Jim Fulford, Charles E. May |
2000-08-01 |