Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7482247 | Conformal nanolaminate dielectric deposition and etch bag gap fill process | Raihan M. Tarafdar, Ron Rulkins, Dennis M. Hausmann, Jeff Tobin, Adrianne K. Tipton +5 more | 2009-01-27 |
| 7297608 | Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition | Raihan M. Tarafdar, Ron Rulkens, Dennis M. Hausmann, Jeff Tobin, Adrianne K. Tipton +1 more | 2007-11-20 |
| 7294583 | Methods for the use of alkoxysilanol precursors for vapor deposition of SiO2 films | Ron Rulkens, Dennis M. Hausmann, Raihan M. Tarafdar, Bunsen B. Nie, Adrianne K. Tipton +1 more | 2007-11-13 |
| 7288463 | Pulsed deposition layer gap fill with expansion material | — | 2007-10-30 |
| 7271112 | Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry | Raihan M. Tarafdar, Adrianne K. Tipton, Ron Rulkens, Dennis M. Hausmann, Jeff Tobin | 2007-09-18 |
| 7223707 | Dynamic rapid vapor deposition process for conformal silica laminates | Jeff Tobin, Ron Rulkens, Dennis M. Hausmann, Adrianne K. Tipton, Raihan M. Tarafdar +1 more | 2007-05-29 |
| 7217658 | Process modulation to prevent structure erosion during gap fill | Atiye Bayman, Yong Ling, Weijie Zhang, Vishal Gauri, Mayasari Lim | 2007-05-15 |
| 7202185 | Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer | Dennis M. Hausmann, Jeff Tobin, Ron Rulkens, Raihan M. Tarafdar, Adrianne K. Tipton +1 more | 2007-04-10 |
| 7176039 | Dynamic modification of gap fill process characteristics | Atiye Bayman | 2007-02-13 |
| 7163899 | Localized energy pulse rapid thermal anneal dielectric film densification method | Seon-Mee Cho | 2007-01-16 |
| 7148155 | Sequential deposition/anneal film densification method | Raihan M. Tarafdar, Ron Rulkens, Dennis M. Hausmann, Jeff Tobin, Adrianne K. Tipton +1 more | 2006-12-12 |
| 7135418 | Optimal operation of conformal silica deposition reactors | — | 2006-11-14 |
| 7129189 | Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD) | Dennis M. Hausmann, Adrianne K. Tipton, Bunsen B. Nie, Ron Rulkens, Raihan M. Tarafdar | 2006-10-31 |
| 7122485 | Deposition profile modification through process chemistry | Edith Goldner, Vishal Gauri, Md Sazzadur Rahman, Vikram Singh | 2006-10-17 |
| 7109129 | Optimal operation of conformal silica deposition reactors | — | 2006-09-19 |
| 7097878 | Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO2 films | Ron Rulkens, Dennis M. Hausmann, Raihan M. Tarafdar, Bunsen B. Nie, Adrianne K. Tipton +1 more | 2006-08-29 |
| 7078312 | Method for controlling etch process repeatability | Siswanto Sutanto, Wenxian Zhu, Waikit Fung, Mayasari Lim, Vishal Gauri | 2006-07-18 |
| 7067440 | Gap fill for high aspect ratio structures | Atiye Bayman, Md Sazzadur Rahman, Weijie Zhang, Bart J. van Schravendijk, Vishal Gauri +1 more | 2006-06-27 |
| 7001854 | Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures | Md Sazzadur Rahman, Pin Sheng Sun, Karen Prichard, Lauren Hall, Vikram Singh | 2006-02-21 |
| 6867086 | Multi-step deposition and etch back gap fill process | David Chen, Robert Shepherd, Vishal Gauri | 2005-03-15 |
| 6846391 | Process for depositing F-doped silica glass in high aspect ratio structures | Robert Tas, Patrick A. Van Cleemput, Bart J. van Schravendijk | 2005-01-25 |
| 6846745 | High-density plasma process for filling high aspect ratio structures | Vishal Gauri, Raihan M. Tarafdar, Vikram Singh | 2005-01-25 |
| 6794290 | Method of chemical modification of structure topography | Robert Tas | 2004-09-21 |
| 6395150 | Very high aspect ratio gapfill using HDP | Patrick A. Van Cleemput, Mark A. Logan, Bart J. van Schravendijk, William J. King | 2002-05-28 |
| 6335261 | Directional CVD process with optimized etchback | Wesley C. Natzle, Richard A. Conti, Laertis Economikos, Thomas Ivers | 2002-01-01 |