YL

Yih-Shung Lin

SS Stmicroelectronics Sa: 26 patents #43 of 1,676Top 3%
TSMC: 8 patents #3,198 of 12,232Top 30%
CM Chartered Semiconductor Manufacturing: 6 patents #107 of 840Top 15%
IN Intel: 2 patents #13,213 of 30,777Top 45%
Overall (All Time): #74,028 of 4,157,543Top 2%
42
Patents All Time

Issued Patents All Time

Showing 25 most recent of 42 patents

Patent #TitleCo-InventorsDate
7294043 CMP apparatus and process sequence method Chen-Shien Chen, Yai-Yei Huang, Ming-Hsiang Kao, Winata Karta Tjandra 2007-11-13
7271103 Surface treated low-k dielectric as diffusion barrier for copper metallization Kuei-Wu Huang, Ai-Sen Liu, Baw-Ching Perng, Ming-Ta Lei, Wen-Kai Wan +2 more 2007-09-18
RE39690 Enhanced planarization technique for an integrated circuit Alex Kalnitsky 2007-06-12
7176137 Method for multiple spacer width control Baw-Ching Perng, Ming-Ta Lei, Ai-Sen Liu, Chia-Hui Lin, Cheng-Chung Lin 2007-02-13
7118451 CMP apparatus and process sequence method Chen-Shien Chen, Yai-Yei Huang, Ming-Hsiang Kao, Winata Karta Tjandra 2006-10-10
7011929 Method for forming multiple spacer widths Ming-Ta Lei, Ai-Sen Liu, Cheng-Chung Lin, Baw-Ching Perng, Chia-Hui Lin 2006-03-14
7004814 CMP process control method Chen-Shien Chen, Yai-Yei Huang, Yean-Zhaw Chen, Kai-Hsiung Chen 2006-02-28
6943077 Selective spacer layer deposition method for forming spacers with different widths Ai-Sen Liu, Baw-Ching Perng, Ming-Ta Lei, Cheng-Chung Lin, Chia-Hui Lin 2005-09-13
6746900 Method for forming a semiconductor device having high-K gate dielectric material Ai-Sen Liu, Baw-Ching Perng, Ming-Ta Lei, Wen-Kai Wan, Cheng-Chung Lin +2 more 2004-06-08
6617242 Method for fabricating interlevel contacts of aluminum/refractory metal alloys Fusen Chen, Fu-Tai Liou, Timothy E. Turner, Che-Chia Wei, Girish Dixit 2003-09-09
6558739 Titanium nitride/titanium tungsten alloy composite barrier layer for integrated circuits Erzhuang Liu, Charles Lin 2003-05-06
6433435 Aluminum contact structure for integrated circuits Fu-Tai Liou 2002-08-13
6291344 Integrated circuit with improved contact barrier De-Dul Liao 2001-09-18
6242811 Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature Fusen Chen, Fu-Tai Liou, Timothy E. Turner, Che-Chia Wei, Girish Dixit 2001-06-05
6207554 Gap filling process in integrated circuits using low dielectric constant materials Yi Xu, Jia Zhen Zheng, Jane Hui, Charles Lin 2001-03-27
6191033 Method of fabricating an integrated circuit with improved contact barrier De-Dui Liao 2001-02-20
6183189 Self aligning wafer chuck design for wafer processing tools Erzhuang Lzu, Xiaosong Eric Tang, Charles Lin 2001-02-06
6127238 Plasma enhanced chemical vapor deposited (PECVD) silicon nitride barrier layer for high density plasma chemical vapor deposited (HDP-CVD) dielectric layer Marvin Liao, Kho Liep Chok, Jia Zhen Zheng, Wei-Lun LU 2000-10-03
6054390 Grazing incident angle processing method for microelectronics layer fabrication Erzhuang Liu, Charles Lin 2000-04-25
5986330 Enhanced planarization technique for an integrated circuit Alex Kalnitsky 1999-11-16
5976969 Method for forming an aluminum contact Fu-Tai Liou 1999-11-02
5943598 Integrated circuit with planarized dielectric layer between successive polysilicon layers 1999-08-24
5930673 Method for forming a metal contact Fusen Chen, Fu-Tai Liou, Girish Dixit, Che-Chia Wei 1999-07-27
5918152 Gap filling method using high pressure Liu Erzhuang, Charles Lin 1999-06-29
5841195 Semiconductor contact via structure Lun-Tseng Lu, Fu-Tai Liou, Che-Chia Wei, John L. Walters 1998-11-24