Issued Patents All Time
Showing 1–25 of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8410544 | finFETs and methods of making same | Kevin K. Chan, Jinghong Li, Christine Qiqing Ouyang, Dae-Gyu Park, Zhibin Ren +2 more | 2013-04-02 |
| 8043920 | finFETS and methods of making same | Kevin K. Chan, Jinghong Li, Christine Qiqing Ouyang, Dae-Gyu Park, Zhibin Ren +2 more | 2011-10-25 |
| 7989298 | Transistor having V-shaped embedded stressor | Kevin K. Chan, Brian J. Greene, Judson R. Holt, Jeffrey B. Johnson, Jophy Stephen Koshy +4 more | 2011-08-02 |
| 7968915 | Dual stress memorization technique for CMOS application | Qiqing C. Ouyang, Haizhou Yin | 2011-06-28 |
| 7871893 | Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices | Gregory Costrini, David M. Dobuzinsky, Munir D. Naeem, Christopher D. Sheraw, Richard S. Wise | 2011-01-18 |
| 7834399 | Dual stress memorization technique for CMOS application | Qiqing C. Ouyang, Haizhou Yin | 2010-11-16 |
| 7659153 | Sectional field effect devices and method of fabrication | Ying Zhang, Bruce B. Doris, Meikei Ieong, Jakub Kedzierski | 2010-02-09 |
| 7413941 | Method of fabricating sectional field effect devices | Ying Zhang, Bruce B. Doris, Meikei Ieong, Jakub Kedzierski | 2008-08-19 |
| 7388258 | Sectional field effect devices | Ying Zhang, Bruce B. Doris, Meikei Ieong, Jakub Kedzierski | 2008-06-17 |
| 7314789 | Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification | Cyril Cabral, Jr., Bruce B. Doris, Xiao Hu Liu, Huilong Zhu | 2008-01-01 |
| 7250658 | Hybrid planar and FinFET CMOS devices | Bruce B. Doris, Diane C. Boyd, Meikei Leong, Jakub Kedzierski, Min Yang | 2007-07-31 |
| 7211490 | Ultra thin channel MOSFET | Bruce B. Doris, Ying Zhang, Huilong Zhu, Meikei Ieong, Omer H. Dokumaci | 2007-05-01 |
| 7173312 | Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification | Cyril Cabral, Jr., Bruce B. Doris, Xiao Hu Liu, Huilong Zhu | 2007-02-06 |
| 7041538 | Method of manufacturing a disposable reversed spacer process for high performance recessed channel CMOS | Meikei Ieong, Omer H. Dokumaci, Victor Ku | 2006-05-09 |
| 7018891 | Ultra-thin Si channel CMOS with improved series resistance | Bruce B. Doris, Meikei Ieong | 2006-03-28 |
| 6914303 | Ultra thin channel MOSFET | Bruce B. Doris, Ying Zhang, Huilong Zhu, Meikei Ieong, Omer H. Dokumaci | 2005-07-05 |
| 6911383 | Hybrid planar and finFET CMOS devices | Bruce B. Doris, Diane C. Boyd, Meikei Ieong, Jakub Kedzierski, Min Yang | 2005-06-28 |
| 6905941 | Structure and method to fabricate ultra-thin Si channel devices | Bruce B. Doris, Meikei Ieong, Wesley C. Natzle | 2005-06-14 |
| 6846734 | Method and process to make multiple-threshold metal gates CMOS technology | Ricky S. Amos, Katayun Barmak, Diane C. Boyd, Cyril Cabral, Jr., Meikei Leong +1 more | 2005-01-25 |
| 6677646 | Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS | Meikei Ieong, Omer H. Dokumaci, Victor Ku | 2004-01-13 |
| 6583462 | Vertical DRAM having metallic node conductor | Toshiharu Furukawa, Rajarao Jammy, Jeffrey J. Welser, David V. Horak, Steven J. Holmes +1 more | 2003-06-24 |
| 6376873 | Vertical DRAM cell with robust gate-to-storage node isolation | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Jeffrey J. Welser | 2002-04-23 |
| 6333533 | Trench storage DRAM cell with vertical three-sided transfer device | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Jack A. Mandelman | 2001-12-25 |
| 6258661 | Formation of out-diffused bitline by laser anneal | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak | 2001-07-10 |
| 6238589 | Methods for monitoring components in the TiW etching bath used in the fabrication of C4s | Emanuel I. Cooper, Madhav Datta, Thomas Edward Dinan, Michael B. Pike, Ravindra V. Shenoy | 2001-05-29 |