Issued Patents All Time
Showing 201–225 of 250 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9911807 | Strain compensation in transistors | Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2018-03-06 |
| 9905651 | GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Marko Radosavljevic, Gilbert Dewey +8 more | 2018-02-27 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more | 2018-01-09 |
| 9818884 | Strain compensation in transistors | Benjamin Chu-Kung, Jack T. Kavalieros, Ravi Pillarisetty, Willy Rachmady, Harold W. Kennel | 2017-11-14 |
| 9818870 | Transistor structure with variable clad/core dimension for stress and bandgap | Willy Rachmady, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Niloy Mukherjee +4 more | 2017-11-14 |
| 9812574 | Techniques and configurations for stacking transistors of an integrated circuit device | Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more | 2017-11-07 |
| 9786786 | Non-planar quantum well device having interfacial layer and method of forming same | Willy Rachmady, Ravi Pillarisetty, Robert S. Chau | 2017-10-10 |
| 9711591 | Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby | Niloy Mukherjee, Matthew V. Metz, James M. Powers, Benjamin Chu-Kung, Mark R. Lemay +6 more | 2017-07-18 |
| 9698222 | Method of fabricating semiconductor structures on dissimilar substrates | Benjamin Chu-Kung, Sherry R. Taft, Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner +3 more | 2017-07-04 |
| 9698265 | Strained channel region transistors employing source and drain stressors and systems including the same | Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Niloy Mukherjee | 2017-07-04 |
| 9691848 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich | 2017-06-27 |
| 9691843 | Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition | Annalisa Cappellani, Peter G. Tolchinsky, Kelin J. Kuhn, Glenn A. Glass | 2017-06-27 |
| 9673302 | Conversion of strain-inducing buffer to electrical insulator | Annalisa Cappellani, Glenn A. Glass, Kelin J. Kuhn, Stephen M. Cea | 2017-06-06 |
| 9666583 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more | 2017-05-30 |
| 9666492 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2017-05-30 |
| 9640537 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more | 2017-05-02 |
| 9640671 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more | 2017-05-02 |
| 9634007 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2017-04-25 |
| 9614093 | Strain compensation in transistors | Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2017-04-04 |
| 9608055 | Semiconductor device having germanium active layer with underlying diffusion barrier layer | Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau, Harold W. Kennel | 2017-03-28 |
| 9590089 | Variable gate width for gate all-around transistors | Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau, Seung Hoon Sung | 2017-03-07 |
| 9583396 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz +3 more | 2017-02-28 |
| 9570614 | Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Marko Radosavljevic, Gilbert Dewey +8 more | 2017-02-14 |
| 9559160 | Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition | Annalisa Cappellani, Peter G. Tolchinsky, Kelin J. Kuhn, Glenn A. Glass | 2017-01-31 |
| 9502568 | Non-planar quantum well device having interfacial layer and method of forming same | Willy Rachmady, Ravi Pillarisetty, Robert S. Chau | 2016-11-22 |