Issued Patents All Time
Showing 226–250 of 250 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9490329 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich | 2016-11-08 |
| 9472613 | Conversion of strain-inducing buffer to electrical insulator | Annalisa Cappellani, Glenn A. Glass, Kelin J. Kuhn, Stephen M. Cea | 2016-10-18 |
| 9461141 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Gilbert Dewey, Niloy Mukherjee +3 more | 2016-10-04 |
| 9397166 | Strained channel region transistors employing source and drain stressors and systems including the same | Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Niloy Mukherjee | 2016-07-19 |
| 9391181 | Lattice mismatched hetero-epitaxial film | Benjamin Chu-Kung, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more | 2016-07-12 |
| 9337291 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more | 2016-05-10 |
| 9306068 | Stain compensation in transistors | Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2016-04-05 |
| 9236476 | Techniques and configuration for stacking transistors of an integrated circuit device | Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more | 2016-01-12 |
| 9159823 | Strain compensation in transistors | Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2015-10-13 |
| 9159787 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich | 2015-10-13 |
| 9136343 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more | 2015-09-15 |
| 9129827 | Conversion of strain-inducing buffer to electrical insulator | Annalisa Cappellani, Glenn A. Glass, Kelin J. Kuhn, Stephen M. Cea | 2015-09-08 |
| 9123567 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2015-09-01 |
| 9123790 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Gilbert Dewey, Niloy Mukherjee +3 more | 2015-09-01 |
| 9112028 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more | 2015-08-18 |
| 9087887 | Non-planar quantum well device having interfacial layer and method of forming same | Willy Rachmady, Ravi Pillarisetty, Robert S. Chau | 2015-07-21 |
| 9029835 | Epitaxial film on nanoscale structure | Benjamin Chu-King, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey, NITIKA GOEL +8 more | 2015-05-12 |
| 8987794 | Non-planar gate all-around device and method of fabrication thereof | Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau, Jessica S. Kachian | 2015-03-24 |
| 8872225 | Defect transferred and lattice mismatched epitaxial film | Benjamin Chu-Kung, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more | 2014-10-28 |
| 8785907 | Epitaxial film growth on patterned substrate | Niti Goel, Niloy Mukherjee, Seung Hoon Sung, Matthew V. Metz, Jack T. Kavalieros +11 more | 2014-07-22 |
| 8765563 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2014-07-01 |
| 8748940 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich | 2014-06-10 |
| 8716751 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more | 2014-05-06 |
| 8710490 | Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer | Ravi Pillarisetty, Niti Goel, Han Wui Then, Willy Rachmady, Marko Radosavljevic +2 more | 2014-04-29 |
| 8575653 | Non-planar quantum well device having interfacial layer and method of forming same | Willy Rachmady, Ravi Pillarisetty, Robert S. Chau | 2013-11-05 |