Issued Patents All Time
Showing 76–100 of 191 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7879739 | Thin transition layer between a group III-V substrate and a high-k gate dielectric layer | Willy Rachmady, James M. Blackwell, Jack T. Kavalieros, Mantu K. Hudait | 2011-02-01 |
| 7875937 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Matthew V. Metz, Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Robert S. Chau | 2011-01-25 |
| 7871916 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2011-01-18 |
| 7859081 | Capacitor, method of increasing a capacitance area of same, and system containing same | Brian S. Doyle, Robert S. Chau, Vivek K. De, Ali Keshavarzi, Dinesh Somasekhar | 2010-12-28 |
| 7858481 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more | 2010-12-28 |
| 7825481 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2010-11-02 |
| 7825437 | Unity beta ratio tri-gate transistor static random access memory (SRAM) | Ravi Pillarisetty, Jack T. Kavalieros, Brian S. Doyle, Uday Shah | 2010-11-02 |
| 7825400 | Strain-inducing semiconductor regions | Jack T. Kavalieros, Been-Yih Jin | 2010-11-02 |
| 7820512 | Spacer patterned augmentation of tri-gate transistor gate length | Ravi Pillarisetty, Jack T. Kavalieros, Brian S. Doyle, Uday Shah | 2010-10-26 |
| 7820513 | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication | Scott A. Hareland, Robert S. Chau, Brian S. Doyle, Rafael Rios, Tom Linton | 2010-10-26 |
| 7790536 | Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures | Mantu K. Hudait, Aaron A. Budrevich, Dmitri Loubychev, Jack T. Kavalieros, Joel M. Fastenau +1 more | 2010-09-07 |
| 7791063 | High hole mobility p-channel Ge transistor structure on Si substrate | Mantu K. Hudait, Jack T. Kavalieros, Peter G. Tolchinsky | 2010-09-07 |
| 7785958 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Uday Shah, Matthew V. Metz +2 more | 2010-08-31 |
| 7776684 | Increasing the surface area of a memory cell capacitor | Brian S. Doyle, Robert S. Chau, Vivek K. De, Dinesh Somasekhar | 2010-08-17 |
| 7736956 | Lateral undercut of metal gate in SOI device | Justin K. Brask, Jack T. Kavalieros, Brian S. Doyle, Gilbert Dewey, Mark L. Doczy +1 more | 2010-06-15 |
| 7718479 | Forming integrated circuits with replacement metal gate electrodes | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Uday Shah +1 more | 2010-05-18 |
| 7714397 | Tri-gate transistor device with stress incorporation layer and method of fabrication | Scott A. Hareland, Robert S. Chau, Brian S. Doyle, Been-Yih Jin | 2010-05-11 |
| 7713803 | Mechanism for forming a remote delta doping layer of a quantum well structure | Been-Yih Jin, Jack T. Kavalieros, Amlan Majumdar, Robert S. Chau | 2010-05-11 |
| 7709909 | Method for making a semiconductor device having a high-k gate dielectric | Mark L. Doczy, Gilbert Dewey, Sangwoo Pae, Justin K. Brask, Jack T. Kavalieros +4 more | 2010-05-04 |
| 7704833 | Method of forming abrupt source drain metal gate transistors | Nick Lindert, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Justin K. Brask +3 more | 2010-04-27 |
| 7671471 | Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Uday Shah, Chris Barns +3 more | 2010-03-02 |
| 7642603 | Semiconductor device with reduced fringe capacitance | Titash Rakshit, Jack T. Kavalieros, Brian S. Doyle | 2010-01-05 |
| 7642610 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2010-01-05 |
| 7638169 | Directing carbon nanotube growth | Marko Radosavljevic, Jack T. Kavalieros, Amlan Majumdar | 2009-12-29 |
| 7629643 | Independent n-tips for multi-gate transistors | Ravi Pillarisetty, Jack T. Kavalieros, Brian S. Doyle | 2009-12-08 |