Issued Patents All Time
Showing 26–50 of 191 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9368583 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2016-06-14 |
| 9337307 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more | 2016-05-10 |
| 9287380 | Gate electrode having a capping layer | Gilbert Dewey, Mark L. Doczy, Justin K. Brask, Matthew V. Metz | 2016-03-15 |
| 9048314 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2015-06-02 |
| 9006707 | Forming arsenide-based complementary logic on a single substrate | Mantu K. Hudait, Jack T. Kavalieros, Marko Radosavljevic | 2015-04-14 |
| 8933458 | Semiconductor device structures and methods of forming semiconductor structures | Justin K. Brask, Jack T. Kavalieros, Brian S. Doyle, Uday Shah, Amlan Majumdar +1 more | 2015-01-13 |
| 8841180 | Strain-inducing semiconductor regions | Jack T. Kavalieros, Been-Yih Jin | 2014-09-23 |
| 8816394 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2014-08-26 |
| 8802517 | Extreme high mobility CMOS logic | Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian, Justin K. Brask +3 more | 2014-08-12 |
| 8803255 | Gate electrode having a capping layer | Gilbert Dewey, Mark L. Doczy, Justin K. Brask, Matthew V. Metz | 2014-08-12 |
| 8664694 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2014-03-04 |
| 8638591 | TFET based 4T memory devices | Vinay Saripalli, Dheeraj Mohata, Saurabh Mookherjea, Vijaykrishnan Narayanan | 2014-01-28 |
| 8581258 | Semiconductor device structures and methods of forming semiconductor structures | Justin K. Brask, Jack T. Kavalieros, Brian S. Doyle, Uday Shah, Amlan Majumdar +1 more | 2013-11-12 |
| 8530884 | Strain inducing semiconductor regions | Jack T. Kavalieros, Been-Yih Jin | 2013-09-10 |
| 8518768 | Extreme high mobility CMOS logic | Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian, Justin K. Brask +3 more | 2013-08-27 |
| 8421059 | Strain-inducing semiconductor regions | Jack T. Kavalieros, Been-Yih Jin | 2013-04-16 |
| 8405164 | Tri-gate transistor device with stress incorporation layer and method of fabrication | Scott A. Hareland, Robert S. Chau, Brian S. Doyle, Been-Yih Jin | 2013-03-26 |
| 8390082 | Gate electrode having a capping layer | Gilbert Dewey, Mark L. Doczy, Justin K. Brask, Matthew V. Metz | 2013-03-05 |
| 8369134 | TFET based 6T SRAM cell | Jawar Singh, Ramakrishnan Krishnan, Saurabh Mookerjea, Vijaykrishnan Narayanan | 2013-02-05 |
| 8368135 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2013-02-05 |
| 8294180 | CMOS devices with a single work function gate electrode and method of fabrication | Brian S. Doyle, Been-Yih Jin, Jack T. Kavalieros, Justin K. Brask, Robert S. Chau | 2012-10-23 |
| 8288233 | Method to introduce uniaxial strain in multigate nanoscale transistors by self aligned SI to SIGE conversion processes and structures formed thereby | Been-Yih Jin, Brian S. Doyle, Jack T. Kavalieros | 2012-10-16 |
| 8273626 | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication | Scott A. Hareland, Robert S. Chau, Brian S. Doyle, Rafael Rios, Tom Linton | 2012-09-25 |
| 8264004 | Mechanism for forming a remote delta doping layer of a quantum well structure | Been-Yih Jin, Jack T. Kavalieros, Amlan Majumdar, Robert S. Chau | 2012-09-11 |
| 8237234 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2012-08-07 |