Issued Patents All Time
Showing 51–75 of 191 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8232588 | Increasing the surface area of a memory cell capacitor | Brian S. Doyle, Robert S. Chau, Vivek K. De, Dinesh Somasekhar | 2012-07-31 |
| 8217383 | High hole mobility p-channel Ge transistor structure on Si substrate | Mantu K. Hudait, Jack T. Kavalieros, Peter G. Tolchinsky | 2012-07-10 |
| 8193567 | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby | Jack T. Kavalieros, Justin K. Brask, Brian S. Doyle, Uday Shah, Mark L. Doczy +2 more | 2012-06-05 |
| 8183646 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2012-05-22 |
| 8169027 | Substrate band gap engineered multi-gate pMOS devices | Brian S. Doyle, Been-Yih Jin, Jack T. Kavalieros | 2012-05-01 |
| 8148786 | Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate | Jack T. Kavalieros, Annalisa Cappellani, Justin K. Brask, Mark L. Doczy, Matthew V. Metz +2 more | 2012-04-03 |
| 8138042 | Capacitor, method of increasing a capacitance area of same, and system containing same | Brian S. Doyle, Robert S. Chau, Vivek K. De, Ali Keshavarzi, Dinesh Somasekhar | 2012-03-20 |
| 8129795 | Inducing strain in the channels of metal gate transistors | Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Justin K. Brask, Robert S. Chau +1 more | 2012-03-06 |
| 8124959 | High hole mobility semiconductor device | Mantu K. Hudait, Robert S. Chau, Marko Radosavljevic | 2012-02-28 |
| 8119508 | Forming integrated circuits with replacement metal gate electrodes | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Uday Shah +1 more | 2012-02-21 |
| 8120065 | Tensile strained NMOS transistor using group III-N source/drain regions | Justin K. Brask, Been-Yih Jin, Jack T. Kavalieros, Mantu K. Hudait | 2012-02-21 |
| 8071983 | Semiconductor device structures and methods of forming semiconductor structures | Justin K. Brask, Jack T. Kavalieros, Uday Shah, Amlan Majumdar, Robert S. Chau +1 more | 2011-12-06 |
| 7989280 | Dielectric interface for group III-V semiconductor device | Justin K. Brask, Mark L. Doczy, James M. Blackwell, Matthew V. Metz, Jack T. Kavalieros +1 more | 2011-08-02 |
| 7968957 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2011-06-28 |
| 7960794 | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow | Brian S. Doyle, Been-Yih Jin, Nancy Zelick, Robert S. Chau | 2011-06-14 |
| 7951673 | Forming abrupt source drain metal gate transistors | Nick Lindert, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Justin K. Brask +3 more | 2011-05-31 |
| 7915694 | Gate electrode having a capping layer | Gilbert Dewey, Mark L. Doczy, Justin K. Brask, Matthew V. Metz | 2011-03-29 |
| 7915167 | Fabrication of channel wraparound gate structure for field-effect transistor | Marko Radosavljevic, Amlan Majumdar, Jack T. Kavalieros, Brian S. Doyle, Justin K. Brask +1 more | 2011-03-29 |
| 7902058 | Inducing strain in the channels of metal gate transistors | Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Justin K. Brask, Robert S. Chau +1 more | 2011-03-08 |
| 7902014 | CMOS devices with a single work function gate electrode and method of fabrication | Brian S. Doyle, Been-Yih Jin, Jack T. Kavalieros, Justin K. Brask, Robert S. Chau | 2011-03-08 |
| 7898041 | Block contact architectures for nanoscale channel transistors | Marko Radosavljevic, Amlan Majumdar, Brian S. Doyle, Jack T. Kavalieros, Mark L. Doczy +3 more | 2011-03-01 |
| 7893506 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2011-02-22 |
| 7888221 | Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions | Jack T. Kavalieros, Matthew V. Metz, Gilbert Dewey, Been-Yih Jin, Justin K. Brask +1 more | 2011-02-15 |
| 7883951 | CMOS device with metal and silicide gate electrodes and a method for making it | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Chris Barns +3 more | 2011-02-08 |
| 7879739 | Thin transition layer between a group III-V substrate and a high-k gate dielectric layer | Willy Rachmady, James M. Blackwell, Jack T. Kavalieros, Mantu K. Hudait | 2011-02-01 |