Issued Patents All Time
Showing 101–125 of 147 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8681573 | Programmable/re-programmable device in high-k metal gate MOS | Walid M. Hafez, Anisur Rahman | 2014-03-25 |
| 8669617 | Multi-gate transistors | Curtis Tsai, Joodong Park, Jeng-Ya David Yeh, Walid M. Hafez | 2014-03-11 |
| 8487376 | High-voltage transistor architectures, processes of forming same, and systems containing same | Walid M. Hafez, Anisur Rahman | 2013-07-16 |
| 8432751 | Memory cell using BTI effects in high-k metal gate MOS | Walid M. Hafez, Anisur Rahman | 2013-04-30 |
| 8426927 | Penetrating implant for forming a semiconductor device | Giuseppe Curello, Ian R. Post, Nick Lindert, Walid M. Hafez, Mark Bohr | 2013-04-23 |
| 8174060 | Selective spacer formation on transistors of different classes on the same device | Giuseppe Curello, Ian R. Post, Mark Bohr | 2012-05-08 |
| 8154067 | Selective spacer formation on transistors of different classes on the same device | Giuseppe Curello, Ian R. Post, Mark Bohr | 2012-04-10 |
| 8101471 | Method of forming programmable anti-fuse element | Walid M. Hafez, Jie Lin, Chetan Prasad, Sangwoo Pae, Zhanping Chen +1 more | 2012-01-24 |
| 7943468 | Penetrating implant for forming a semiconductor device | Giuseppe Curello, Ian R. Post, Nick Lindert, Walid M. Hafez, Mark Bohr | 2011-05-17 |
| 7691718 | Dual layer hard mask for block salicide poly resistor (BSR) patterning | Joodong Park, Paul T. Reese | 2010-04-06 |
| 7682916 | Field effect transistor structure with abrupt source/drain junctions | Anand S. Murthy, Robert S. Chau, Patrick Morrow, Paul Packan | 2010-03-23 |
| 7560780 | Active region spacer for semiconductor devices and method to form the same | Giuseppe Curello, Ian R. Post, Sunit Tyagi, Mark Bohr | 2009-07-14 |
| 7541239 | Selective spacer formation on transistors of different classes on the same device | Giuseppe Curello, Ian R. Post, Mark Bohr | 2009-06-02 |
| 7436035 | Method of fabricating a field effect transistor structure with abrupt source/drain junctions | Anand S. Murthy, Robert S. Chau, Patrick Morrow, Paul Packan | 2008-10-14 |
| 7338873 | Method of fabricating a field effect transistor structure with abrupt source/drain junctions | Anand S. Murthy, Robert S. Chau, Patrick Morrow, Paul Packan | 2008-03-04 |
| 7211872 | Device having recessed spacers for improved salicide resistance on polysilicon gates | Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more | 2007-05-01 |
| 7115502 | Structure and manufacturing process of localized shunt to reduce electromigration failure of copper dual damascene process | — | 2006-10-03 |
| 7071129 | Enhancing adhesion of silicon nitride films to carbon-containing oxide films | Tracey Scherban, Ying Zhou, Adam J. Schafer, Brett Schroeder | 2006-07-04 |
| 6887762 | Method of fabricating a field effect transistor structure with abrupt source/drain junctions | Anand S. Murthy, Robert S. Chau, Patrick Morrow, Paul Packan | 2005-05-03 |
| 6861758 | Structure and manufacturing process of localized shunt to reduce electromigration failure of copper dual damascene process | — | 2005-03-01 |
| 6777760 | Device with recessed thin and thick spacers for improved salicide resistance on polysilicon gates | Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more | 2004-08-17 |
| 6777759 | Device structure and method for reducing silicide encroachment | Robert S. Chau, Ebrahim Andideh, Mitch Taylor, Julie Tsai | 2004-08-17 |
| 6765273 | Device structure and method for reducing silicide encroachment | Robert S. Chau, Ebrahim Andideh, Mitch Taylor, Julie Tsai | 2004-07-20 |
| 6703672 | Polysilicon/amorphous silicon composite gate electrode | Lawrence N. Brigham, Binglong Zhang | 2004-03-09 |
| 6593633 | Method and device for improved salicide resistance on polysilicon gates | Julie Tsai, Simon Shi-Ning Yang, Tahir Ghani, Kevin A. Whitehill, Steven J. Keating +1 more | 2003-07-15 |