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Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
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Lawrence N. Brigham — 12 Patents

Intel: 12 patents #3,451 of 30,777Top 15%
Beaverton, OR: #504 of 3,140 inventorsTop 20%
Oregon: #3,634 of 28,073 inventorsTop 15%
Overall (All Time): #396,045 of 4,157,543Top 10%
12 Patents All Time
Lawrence N. Brigham has been granted 12 US patents while listed as an inventor at Intel. The first was granted in 1992 and the most recent in April 2004. Lawrence N. Brigham ranks #396,045 of 4,157,543 US inventors in our database (top 9.5%). Patent records list Lawrence N. Brigham in Beaverton, OR, US.

Patents per Year

Patents granted per year, 1992 to 2004Bar chart with a peak of 3 patents in 2000.peak 31992: 1 patents19921997: 1 patents19971998: 1 patents19981999: 2 patents19992000: 3 patents20002001: 1 patents20012002: 1 patents20022004: 2 patents2004

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
6720631 Transistor having a deposited dual-layer spacer structure Raymond E. Cotner, Makarem A. Hussein 2004-04-13 $35,249,000
6703672 Polysilicon/amorphous silicon composite gate electrode Chia-Hong Jan, Binglong Zhang 2004-03-09 $36,606,000
6380010 Shielded channel transistor structure with embedded source/drain junctions Richard Green, Ebrahim Andideh 2002-04-30 $84,693,000
6274913 Shielded channel transistor structure with embedded source/drain junctions Richard Green, Ebrahim Andideh 2001-08-14 $220,088,000
6121100 Method of fabricating a MOS transistor with a raised source/drain extension Ebrahim Andideh, Robert S. Chau, Tahir Ghani, Chia-Hong Jan, Justin S. Sandford +1 more 2000-09-19 $252,989,000
6046494 High tensile nitride layer Yung-Huei Lee, Robert S. Chau, Raymond E. Cotner 2000-04-04 $215,158,000
6017819 Method for forming a polysilicon/amorphous silicon composite gate electrode Chia-Hong Jan, Binglong Zhang 2000-01-25 $365,842,000
5911111 Polysilicon polish for patterning improvement Mark Bohr, Peter K. Moon, Seiichi Morimoto 1999-06-08 $280,317,000
5891809 Manufacturable dielectric formed using multiple oxidation and anneal steps Robert S. Chau, Chia-Hong Jan, Chan-Hong Chern, Binny Arcot 1999-04-06 $71,710,000
5714413 Method of making a transistor having a deposited dual-layer spacer structure Raymond E. Cotner, Makarem A. Hussein 1998-02-03 $122,866,000
5633202 High tensile nitride layer Yung-Huei Lee, Robert S. Chau, Raymond E. Cotner 1997-05-27 $86,657,000
5091332 Semiconductor field oxidation process Mark Bohr, Shahab Hossaini 1992-02-25 $63,768,000