SK

Steven J. Koester

IBM: 60 patents #1,306 of 70,183Top 2%
UM University of Minnesota: 16 patents #31 of 2,951Top 2%
HS Hanon Systems: 9 patents #68 of 877Top 8%
SE Siemens Energy: 4 patents #177 of 1,016Top 20%
SG Siemens Energy Global: 3 patents #86 of 1,160Top 8%
SA Siemens Aktiengesellschaft: 2 patents #6,658 of 22,248Top 30%
Globalfoundries: 2 patents #1,397 of 4,424Top 35%
Boston Scientific Scimed: 2 patents #1,673 of 3,579Top 50%
📍 Edina, MN: #4 of 909 inventorsTop 1%
🗺 Minnesota: #221 of 52,454 inventorsTop 1%
Overall (All Time): #15,572 of 4,157,543Top 1%
96
Patents All Time

Issued Patents All Time

Showing 76–96 of 96 patents

Patent #TitleCo-InventorsDate
7652332 Extremely-thin silicon-on-insulator transistor with raised source/drain Eduard A. Cartier, Kingsuk Maitra, Amlan Majumdar, Renee T. Mo 2010-01-26
7521376 Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment Martin M. Frank, John A. Ott, Huiling Shang 2009-04-21
7510904 Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector Jack O. Chu, Gabriel Dehlinger, Alfred Grill, Qiqing C. Ouyang, Jeremy D. Schaub 2009-03-31
7504311 Structure and method of integrating compound and elemental semiconductors for high-performance CMOS Devendra K. Sadana, Ghavam G. Shahidi 2009-03-17
7393735 Structure for and method of fabricating a high-mobility field-effect transistor Jack O. Chu, Qiqing C. Ouyang 2008-07-01
7282425 Structure and method of integrating compound and elemental semiconductors for high-performance CMOS Devendra K. Sadana, Ghavam G. Shahidi 2007-10-16
7183175 Shallow trench isolation structure for strained Si on SiGe Klaus D. Beyer, Michael Hargrove, Kern Rim, Kevin K. Chan 2007-02-27
7138697 Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector Jack O. Chu, Gabriel Dehlinger, Alfred Grill, Qiging Ouyang, Jeremy D. Schaub 2006-11-21
7084431 High speed composite p-channel Si/SiGe heterostructure for field effect devices Jack O. Chu, Richard Hammond, Khalid EzzEldin Ismail, Patricia M. Mooney, John A. Ott 2006-08-01
7083998 Si/SiGe optoelectronic integrated circuits Jack O. Chu, Khalid EzzEldin Ismail, Bernd-Ulrich Klepser 2006-08-01
7074686 Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications Stephen W. Bedell, Jack O. Chu, Keith E. Fogel, Devendra K. Sadana 2006-07-11
6972440 Enhanced T-gate structure for modulation doped field effect transistors Dinkar Singh, Katherine L. Saenger, Vishnubhai V. Patel, Alfred Grill 2005-12-06
6972250 Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Jack O. Chu, Guy M. Cohen +2 more 2005-12-06
6949761 Structure for and method of fabricating a high-mobility field-effect transistor Jack O. Chu, Qiqing C. Ouyang 2005-09-27
6858502 High speed composite p-channel Si/SiGe heterostructure for field effect devices Jack O. Chu, Richard Hammond, Khalid EzzEldin Ismail, Patricia M. Mooney, John A. Ott 2005-02-22
6805962 Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications Stephen W. Bedell, Jack O. Chu, Keith E. Fogel, Devendra K. Sadana, John A. Ott 2004-10-19
6784466 Si/SiGe optoelectronic integrated circuits Jack O. Chu, Khalid EzzEldin Ismail, Bernd-Ulrich Klepser 2004-08-31
6743651 Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen Jack O. Chu, Feng-Yi Huang, Devendra K. Sadana 2004-06-01
6740535 Enhanced T-gate structure for modulation doped field effect transistors Dinkar Singh, Katherine L. Saenger, Vishnubhai V. Patel, Alfred Grill 2004-05-25
6690072 Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device Cyril Cabral, Jr., Roy A. Carruthers, Kevin K. Chan, Jack O. Chu, Guy M. Cohen +2 more 2004-02-10
6350993 High speed composite p-channel Si/SiGe heterostructure for field effect devices Jack O. Chu, Richard Hammond, Khalid EzzEldin Ismail, Patricia M. Mooney, John A. Ott 2002-02-26