LH

Louis L. Hsu

IBM: 466 patents #26 of 70,183Top 1%
Infineon Technologies Ag: 9 patents #2,021 of 7,486Top 30%
SA Siemens Aktiengesellschaft: 3 patents #4,667 of 22,248Top 25%
IT ITRI: 2 patents #3,461 of 9,619Top 40%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
📍 Taipei, NY: #1 of 76 inventorsTop 2%
Overall (All Time): #439 of 4,157,543Top 1%
471
Patents All Time

Issued Patents All Time

Showing 351–375 of 471 patents

Patent #TitleCo-InventorsDate
6278171 Sublithographic fuses using a phase shift mask Kenneth C. Arndt, Jack A. Mandelman, K. Paul Muller 2001-08-21
6274467 Dual work function gate conductors with self-aligned insulating cap Jeffrey P. Gambino, Jack A. Mandelman, Carl Radens, William R. Tonti 2001-08-14
6275096 Charge pump system having multiple independently activated charge pumps and corresponding method Oliver Weinfurtner, Matthew R. Wordeman 2001-08-14
6259135 MOS transistors structure for reducing the size of pitch limited circuits Carl Radens 2001-07-10
6259126 Low cost mixed memory integration with FERAM Jack A. Mandelman, Fariborz Assaderaghi 2001-07-10
6255157 Method for forming a ferroelectric capacitor under the bit line David E. Kotecki, Jack A. Mandelman 2001-07-03
6255712 Semi-sacrificial diamond for air dielectric formation Lawrence A. Clevenger 2001-07-03
6252271 Flash memory structure using sidewall floating gate and method for forming the same Jeffrey P. Gambino, Jack A. Mandelman, Donald C. Wheeler 2001-06-26
6245613 Field effect transistor having a floating gate Jack A. Mandelman, Chih-Chun Hu 2001-06-12
6236617 High performance CMOS word-line driver Hans-Oliver Joachim, Matthew R. Wordeman, Hing Wong 2001-05-22
6232154 Optimized decoupling capacitor using lithographic dummy filler Armin Reith, Henning Haffner, Gunther Lehmann 2001-05-15
6232173 Process for forming a memory structure that includes NVRAM, DRAM, and/or SRAM memory structures on one substrate and process for forming a new NVRAM cell structure Jack A. Mandelman, Fariborz Assaderaghi 2001-05-15
6228745 Selective reduction of sidewall slope on isolation edge Donald C. Wheeler, Jack A. Mandelman, Rebecca D. Mih 2001-05-08
6222244 Electrically blowable fuse with reduced cross-sectional area Kenneth C. Arndt, Dureseti Chidambarrao, Jack A. Mandelman, Carl Radens 2001-04-24
6214653 Method for fabricating complementary metal oxide semiconductor (CMOS) devices on a mixed bulk and silicon-on-insulator (SOI) substrate Howard H. Chen, Li-Kong Wang 2001-04-10
6207530 Dual gate FET and process Li-Kong Wang 2001-03-27
6198677 Boosted sensing ground circuit Li-Kong Wang 2001-03-06
6190986 Method of producing sulithographic fuses using a phase shift mask Kenneth C. Arndt, Jack A. Mandelman, K. Paul Muller 2001-02-20
6177299 Transistor having substantially isolated body and method of making the same Jack A. Mandelman 2001-01-23
6174762 Salicide device with borderless contact Gary B. Bronner, Jeffrey P. Gambino, Jack A. Mandelman, Carl Radens, William R. Tonti 2001-01-16
6163045 Reduced parasitic leakage in semiconductor devices Jack A. Mandelman, Johann Alsmeier, William R. Tonti 2000-12-19
6160292 Circuit and methods to improve the operation of SOI devices Roy C. Flaker, Jente B. Kuang 2000-12-12
6157067 Metal oxide semiconductor capacitor utilizing dummy lithographic patterns Dmitry Netis 2000-12-05
6151200 Method of discharging SOI floating body charge Jente B. Kuang, Somnuk Ratanaphanyarat, Mary J. Saccamango 2000-11-21
6147402 Refractory metal capped low resistivity metal conductor lines and vias Rajiv V. Joshi, Jerome J. Cuomo, Hormazdyar M. Dalal 2000-11-14