Issued Patents All Time
Showing 376–400 of 548 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10217707 | Trench contact resistance reduction | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-02-26 |
| 10211321 | Stress retention in fins of fin field-effect transistors | Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg, John R. Sporre | 2019-02-19 |
| 10211319 | Stress retention in fins of fin field-effect transistors | Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg, John R. Sporre | 2019-02-19 |
| 10204836 | Porous silicon relaxation medium for dislocation free CMOS devices | Kangguo Cheng, Ramachandra Divakaruni, Jeehwan Kim, Devendra K. Sadana | 2019-02-12 |
| 10170548 | Integrated capacitors with nanosheet transistors | Kangguo Cheng, James J. Demarest, John G. Gaudiello | 2019-01-01 |
| 10170364 | Stress memorization technique for strain coupling enhancement in bulk finFET device | Kangguo Cheng, Chun-Chen Yeh | 2019-01-01 |
| 10168075 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Hong He, Chih-Chao Yang, Yunpeng Yin | 2019-01-01 |
| 10170331 | Stacked nanowires | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2019-01-01 |
| 10170498 | Strained CMOS on strain relaxation buffer substrate | Kangguo Cheng, Balasubramanian Pranatharthiharan | 2019-01-01 |
| 10170425 | Microstructure of metal interconnect layer | Hong He, Junli Wang, Chih-Chao Yang | 2019-01-01 |
| 10164007 | Transistor with improved air spacer | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-12-25 |
| 10157935 | Nanosheet capacitor | Kangguo Cheng, Geng Wang, Qintao Zhang | 2018-12-18 |
| 10147679 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz | 2018-12-04 |
| 10147804 | High density vertical nanowire stack for field effect transistor | Kangguo Cheng, Ali Khakifirooz | 2018-12-04 |
| 10147808 | Techniques for forming vertical tunneling FETS | Kangguo Cheng, Xin Miao, Peng Xu | 2018-12-04 |
| 10141313 | FinFET with uniform shallow trench isolation recess | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-11-27 |
| 10141338 | Strained CMOS on strain relaxation buffer substrate | Kangguo Cheng, Balasubramanian Pranatharthiharan | 2018-11-27 |
| 10141403 | Integrating thin and thick gate dielectric nanosheet transistors on same chip | Kangguo Cheng, Geng Wang, Qintao Zhang | 2018-11-27 |
| 10141420 | Transistors with dielectric-isolated source and drain regions | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2018-11-27 |
| 10128235 | Asymmetrical vertical transistor | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-11-13 |
| 10128122 | Stacked nanowires | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2018-11-13 |
| 10115629 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Eric G. Liniger, Sanjay C. Mehta, Son V. Nguyen +2 more | 2018-10-30 |
| 10115805 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Zuoguang Liu, Xin Miao | 2018-10-30 |
| 10096695 | Closely packed vertical transistors with reduced contact resistance | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2018-10-09 |
| 10096698 | Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy | Kangguo Cheng | 2018-10-09 |