Issued Patents All Time
Showing 326–350 of 548 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10388755 | Stacked nanosheets with self-aligned inner spacers and metallic source/drain | Choonghyun Lee, Kangguo Cheng | 2019-08-20 |
| 10388732 | Nanosheet field-effect transistors including a two-dimensional semiconducting material | Julien Frougier, Ruilong Xie, Nicolas Loubet, Kangguo Cheng | 2019-08-20 |
| 10388569 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Heng Wu, Peng Xu | 2019-08-20 |
| 10381476 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-08-13 |
| 10381355 | Dense vertical field effect transistor structure | Peng Xu, Kangguo Cheng, Zhenxing Bi | 2019-08-13 |
| 10374089 | Tensile strain in NFET channel | Peng Xu, Kangguo Cheng, Heng Wu | 2019-08-06 |
| 10374091 | Silicon germanium fin immune to epitaxy defect | Kangguo Cheng, Xin Miao | 2019-08-06 |
| 10361303 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-07-23 |
| 10361155 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz | 2019-07-23 |
| 10347743 | Vertical transport fin field effect transistor (VT FinFET) having an uniform L-shaped inner spacer | Kangguo Cheng, Peng Xu, Jingyun Zhang | 2019-07-09 |
| 10347727 | Fin-type FET with low source or drain contact resistance | Kangguo Cheng, Heng Wu, Peng Xu | 2019-07-09 |
| 10340292 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Zuoguang Liu, Xin Miao | 2019-07-02 |
| 10332986 | Formation of inner spacer on nanosheet MOSFET | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-06-25 |
| 10332983 | Vertical field-effect transistors including uniform gate lengths | Kangguo Cheng, Choonghyun Lee, Heng Wu, Peng Xu | 2019-06-25 |
| 10332799 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-06-25 |
| 10332999 | Method and structure of forming fin field-effect transistor without strain relaxation | Kangguo Cheng, Choonghyun Lee, Peng Xu, Heng Wu | 2019-06-25 |
| 10325817 | Semiconductor fin patterning techniques to achieve uniform fin profiles for fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-06-18 |
| 10326020 | Structure and method for forming strained FinFET by cladding stressors | Kangguo Cheng | 2019-06-18 |
| 10319813 | Nanosheet CMOS transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-06-11 |
| 10319643 | Vertical FET with strained channel | Choonghyun Lee, Kangguo Cheng, Shogo Mochizuki | 2019-06-11 |
| 10319677 | Fabrication of vertical fuses from vertical fins | Kangguo Cheng, James J. Demarest | 2019-06-11 |
| 10312132 | Forming sacrificial endpoint layer for deep STI recess | Kangguo Cheng, Sebastian Naczas, Peng Xu | 2019-06-04 |
| 10290574 | Embedded metal-insulator-metal (MIM) decoupling capacitor in monolitic three-dimensional (3D) integrated circuit (IC) structure | Geng Wang, Kangguo Cheng, Chengwen Pei | 2019-05-14 |
| 10283592 | Approach to minimization of strain loss in strained fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-05-07 |
| 10283625 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Ramachandra Divakaruni, Xin Miao | 2019-05-07 |