Issued Patents All Time
Showing 301–325 of 548 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522594 | Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element | Peng Xu, Kangguo Cheng, Choonghyun Lee | 2019-12-31 |
| 10504890 | High density nanosheet diodes | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-12-10 |
| 10504794 | Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor | Choonghyun Lee, Kangguo Cheng, Peng Xu | 2019-12-10 |
| 10497796 | Vertical transistor with reduced gate length variation | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2019-12-03 |
| 10490447 | Airgap formation in BEOL interconnect structure using sidewall image transfer | Kangguo Cheng, Ekmini Anuja De Silva, Yi Song, Peng Xu | 2019-11-26 |
| 10475923 | Method and structure for forming vertical transistors with various gate lengths | Kangguo Cheng, Shogo Mochizuki, Choonghyun Lee | 2019-11-12 |
| 10460982 | Formation of semiconductor devices with dual trench isolations | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2019-10-29 |
| 10453940 | Vertical field effect transistor with strained channel region extension | Shogo Mochizuki, Choonghyun Lee, Kangguo Cheng | 2019-10-22 |
| 10453843 | Multiple finFET Formation with epitaxy separation | Kangguo Cheng, Peng Xu | 2019-10-22 |
| 10446647 | Approach to minimization of strain loss in strained fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-10-15 |
| 10446664 | Inner spacer formation and contact resistance reduction in nanosheet transistors | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2019-10-15 |
| 10439044 | Method and structure of fabricating I-shaped silicon germanium vertical field-effect transistors | Choonghyun Lee, Kangguo Cheng, Peng Xu | 2019-10-08 |
| 10431660 | Self-limiting fin spike removal | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2019-10-01 |
| 10424482 | Methods and structures for forming a tight pitch structure | Peng Xu, Kangguo Cheng, Choonghyun Lee | 2019-09-24 |
| 10422746 | Nanoscale surface with nanoscale features formed using diffusion at a liner-semiconductor interface | Kangguo Cheng, Qing Cao | 2019-09-24 |
| 10418463 | Silicon germanium alloy fins with reduced defects | Kangguo Cheng, Hong He | 2019-09-17 |
| 10418277 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Eric G. Liniger, Sanjay C. Mehta, Son V. Nguyen +2 more | 2019-09-17 |
| 10411094 | Method and structure for forming silicon germanium FinFET | Peng Xu, Kangguo Cheng, Heng Wu | 2019-09-10 |
| 10410928 | Homogeneous densification of fill layers for controlled reveal of vertical fins | Kangguo Cheng, Choonghyun Lee, Heng Wu, Peng Xu | 2019-09-10 |
| 10403716 | Trench contact resistance reduction | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-09-03 |
| 10403772 | Electrical and optical via connections on a same chip | Kangguo Cheng, Chengwen Pei, Geng Wang, Joseph Ervin | 2019-09-03 |
| 10396027 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz | 2019-08-27 |
| 10396151 | Vertical field effect transistor with reduced gate to source/drain capacitance | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2019-08-27 |
| 10396169 | Nanosheet transistors having different gate dielectric thicknesses on the same chip | Kangguo Cheng, Geng Wang, Qintao Zhang | 2019-08-27 |
| 10395994 | Equal spacer formation on semiconductor device | Heng Wu, Peng Xu, Kangguo Cheng, Choonghyun Lee | 2019-08-27 |